DOI: 10.1063/1.3374882. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

10.1063/1.3374882

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 °C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1×1018 cm−3. The corresponding doping efficiency and hole mobility are ∼4.9% and 3.7 cm2/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (λpeak=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 Ω.

Bibliography

Zhang, M., Bhattacharya, P., Guo, W., & Banerjee, A. (2010). Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. Applied Physics Letters, 96(13).

Authors 4

Meng Zhang (first)
Pallab Bhattacharya (additional)
Wei Guo (additional)
Animesh Banerjee (additional)

References 14 Referenced 37

10.1016/j.jcrysgro.2008.12.040 / J. Cryst. Growth (2009)
10.1109/LED.2004.826977 / IEEE Electron Device Lett. (2004)
10.1063/1.1471923 / J. Appl. Phys. (2002)
10.1063/1.1305830 / J. Appl. Phys. (2000)
10.1063/1.125872 / Appl. Phys. Lett. (2000)
10.1016/j.jcrysgro.2005.01.004 / J. Cryst. Growth (2005)
10.1063/1.1826223 / Appl. Phys. Lett. (2004)
10.1063/1.2817597 / Appl. Phys. Lett. (2007)
10.1007/s11664-001-0122-z / J. Electron. Mater. (2001)
10.1016/0039-6028(64)90024-X / Surf. Sci. (1964)
10.1063/1.2137446 / J. Appl. Phys. (2005)
10.1063/1.1853530 / Appl. Phys. Lett. (2005)
10.1016/j.jcrysgro.2008.03.030 / J. Cryst. Growth (2008)
10.1063/1.3065274 / J. Appl. Phys. (2009)

Dates

Type	When
Created	15 years, 5 months ago (March 30, 2010, 6:34 p.m.)
Deposited	2 years, 1 month ago (July 31, 2023, 5:10 a.m.)
Indexed	1 month ago (July 30, 2025, 6:55 a.m.)
Issued	15 years, 5 months ago (March 29, 2010)
Published	15 years, 5 months ago (March 29, 2010)
Published Online	15 years, 5 months ago (March 30, 2010)
Published Print	15 years, 5 months ago (March 29, 2010)

Funders 0

None

BibTeX

@article{Zhang_2010, title={Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3374882}, DOI={10.1063/1.3374882}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, Meng and Bhattacharya, Pallab and Guo, Wei and Banerjee, Animesh}, year={2010}, month=mar }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:55:19Z",
    "timestamp": 1753872919156,
    "version": "3.41.2"
  },
  "reference-count": 14,
  "publisher": "AIP Publishing",
  "issue": "13",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2010,
        3,
        29
      ]
    ]
  },
  "abstract": "<jats:p>Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740\u2009\u00b0C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1\u00d71018\u2002cm\u22123. The corresponding doping efficiency and hole mobility are \u223c4.9% and 3.7\u2002cm2/V\u2009s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (\u03bbpeak=529\u2002nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8\u2002\u03a9.</jats:p>",
  "DOI": "10.1063/1.3374882",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2010,
        3,
        30
      ]
    ],
    "date-time": "2010-03-30T22:34:54Z",
    "timestamp": 1269988494000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 37,
  "title": "Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions",
  "prefix": "10.1063",
  "volume": "96",
  "author": [
    {
      "given": "Meng",
      "family": "Zhang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "University of Michigan Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, , Ann Arbor, Michigan 48109-2122, USA"
        }
      ]
    },
    {
      "given": "Pallab",
      "family": "Bhattacharya",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Michigan Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, , Ann Arbor, Michigan 48109-2122, USA"
        }
      ]
    },
    {
      "given": "Wei",
      "family": "Guo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Michigan Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, , Ann Arbor, Michigan 48109-2122, USA"
        }
      ]
    },
    {
      "given": "Animesh",
      "family": "Banerjee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Michigan Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, , Ann Arbor, Michigan 48109-2122, USA"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2010,
        3,
        30
      ]
    ]
  },
  "reference": [
    {
      "key": "2023073109105052700_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1632",
      "DOI": "10.1016/j.jcrysgro.2008.12.040",
      "volume": "311",
      "year": "2009",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023073109105052700_c2",
      "doi-asserted-by": "publisher",
      "first-page": "247",
      "DOI": "10.1109/LED.2004.826977",
      "volume": "25",
      "year": "2004",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023073109105052700_c3",
      "doi-asserted-by": "publisher",
      "first-page": "9638",
      "DOI": "10.1063/1.1471923",
      "volume": "91",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023073109105052700_c4",
      "doi-asserted-by": "publisher",
      "first-page": "1855",
      "DOI": "10.1063/1.1305830",
      "volume": "88",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023073109105052700_c5",
      "doi-asserted-by": "publisher",
      "first-page": "718",
      "DOI": "10.1063/1.125872",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023073109105052700_c6",
      "doi-asserted-by": "publisher",
      "first-page": "443",
      "DOI": "10.1016/j.jcrysgro.2005.01.004",
      "volume": "278",
      "year": "2005",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023073109105052700_c7",
      "doi-asserted-by": "publisher",
      "first-page": "4956",
      "DOI": "10.1063/1.1826223",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023073109105052700_c8",
      "doi-asserted-by": "publisher",
      "first-page": "221905",
      "DOI": "10.1063/1.2817597",
      "volume": "91",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023073109105052700_c9",
      "doi-asserted-by": "publisher",
      "first-page": "1343",
      "DOI": "10.1007/s11664-001-0122-z",
      "volume": "30",
      "year": "2001",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2023073109105052700_c10",
      "doi-asserted-by": "publisher",
      "first-page": "125",
      "DOI": "10.1016/0039-6028(64)90024-X",
      "volume": "1",
      "year": "1964",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023073109105052700_c11",
      "doi-asserted-by": "publisher",
      "first-page": "103531",
      "DOI": "10.1063/1.2137446",
      "volume": "98",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023073109105052700_c12",
      "doi-asserted-by": "publisher",
      "first-page": "041908",
      "DOI": "10.1063/1.1853530",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023073109105052700_c13",
      "doi-asserted-by": "publisher",
      "first-page": "3131",
      "DOI": "10.1016/j.jcrysgro.2008.03.030",
      "volume": "310",
      "year": "2008",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023073109105052700_c14",
      "doi-asserted-by": "publisher",
      "first-page": "013117",
      "DOI": "10.1063/1.3065274",
      "volume": "105",
      "year": "2009",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3374882/14432006/132103_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3374882/14432006/132103_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        31
      ]
    ],
    "date-time": "2023-07-31T09:10:56Z",
    "timestamp": 1690794656000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/96/13/132103/892527/Mg-doping-of-GaN-grown-by-plasma-assisted"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2010,
        3,
        29
      ]
    ]
  },
  "references-count": 14,
  "journal-issue": {
    "issue": "13",
    "published-print": {
      "date-parts": [
        [
          2010,
          3,
          29
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3374882",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2010,
        3,
        29
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2010,
        3,
        29
      ]
    ]
  },
  "article-number": "132103"
}