DOI: 10.1063/1.337428. Photoluminescence study of ZnSe–ZnTe strained-layer superlattices grown on InP substrates

Photoluminescence study of ZnSe–ZnTe strained-layer superlattices grown on InP substrates

10.1063/1.337428

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Optical properties of ZnSe–ZnTe strained-layer superlattice (SLS) grown on InP substrates were evaluated by photoluminescence. The luminescence peak intensity and position were affected by the photoexcitation intensity. The line shape was also affected by the growth temperature. The peak position was shifted by tailoring the structure of the superlattice, but it did not correlate exactly with previously reported theoretical values. We have reconsidered their data, and a better result on theoretical calulation was achieved. The luminescence color changed in the visible region from green to red. This SLS could be a new material for optoelectronic devices.

Bibliography

Kobayashi, M., Mino, N., Katagiri, H., Kimura, R., Konagai, M., & Takahashi, K. (1986). Photoluminescence study of ZnSeâZnTe strained-layer superlattices grown on InP substrates. Journal of Applied Physics, 60(2), 773â778.

Authors 6

Masakazu Kobayashi (first)
Naoki Mino (additional)
Hironori Katagiri (additional)
Ryuhei Kimura (additional)
Makoto Konagai (additional)
Kiyoshi Takahashi (additional)

References 11 Referenced 59

10.1116/1.582561 / J. Vac. Sci. Technol. B (1983)
{'key': '2024020405164106200_r2', 'first-page': '326', 'volume': 'EDL-5', 'year': '1984', 'journal-title': 'IEEE Electron Dev. Lett.'} / IEEE Electron Dev. Lett. (1984)
{'key': '2024020405164106200_r3', 'first-page': '569', 'volume': '28', 'year': '1985', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1985)
10.1063/1.96585 / Appl. Phys. Lett. (1986)
10.1063/1.334087 / J. Appl. Phys. (1984)
{'key': '2024020405164106200_r6', 'first-page': 'L', 'volume': '20', 'year': '1984', 'journal-title': 'Jpn. J. Appl. Phys. Lett.'} / Jpn. J. Appl. Phys. Lett. (1984)
10.1063/1.335239 / J. Appl. Phys. (1985)
10.1116/1.569312 / J. Vac. Sci. Technol. (1977)
10.1116/1.582929 / J. Vac. Sci. Technol. B (1984)
10.1063/1.336007 / J. Appl. Phys. (1985)
{'key': '2024020405164106200_r11'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 12:16 a.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 6 a.m.)
Issued	39 years, 1 month ago (July 15, 1986)
Published	39 years, 1 month ago (July 15, 1986)
Published Print	39 years, 1 month ago (July 15, 1986)

Funders 0

None

BibTeX

@article{Kobayashi_1986, title={Photoluminescence study of ZnSe–ZnTe strained-layer superlattices grown on InP substrates}, volume={60}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.337428}, DOI={10.1063/1.337428}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kobayashi, Masakazu and Mino, Naoki and Katagiri, Hironori and Kimura, Ryuhei and Konagai, Makoto and Takahashi, Kiyoshi}, year={1986}, month=jul, pages={773–778} }

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