Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

In this paper, we consider how oxidation in dry O2 influences the point-defect densities in silicon. By using relationships based on the continuity equations in the oxide and applying a proposed set of boundary conditions to the oxidizing Si-SiO2 system, we derive an analytic expression for the supersaturation of interstitials during oxidation. The analysis results in an expression having the experimentally observed sublinear dependence on oxidation rate without requiring any assumptions of nonlinearity. In addition, through observations of the dependence of the linear rate constant in the linear-parabolic model of oxidation on ambient oxygen pressure, it is possible to predict how the interstitial supersaturation will vary with oxidation rate at a given temperature. A companion paper [J. Appl. Phys. 59, 2551 (1986)] compares the predictions of the model with experimental results.

Bibliography

Dunham, S. T., & Plummer, J. D. (1986). Point-defect generation during oxidation of silicon in dry oxygen. I. Theory. Journal of Applied Physics, 59(7), 2541–2550.

Authors 2
  1. Scott T. Dunham (first)
  2. James D. Plummer (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 8:53 a.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 12:19 a.m.)
Indexed 4 weeks, 1 day ago (July 27, 2025, 3:16 a.m.)
Issued 39 years, 4 months ago (April 1, 1986)
Published 39 years, 4 months ago (April 1, 1986)
Published Print 39 years, 4 months ago (April 1, 1986)
Funders 0

None

@article{Dunham_1986, title={Point-defect generation during oxidation of silicon in dry oxygen. I. Theory}, volume={59}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.337003}, DOI={10.1063/1.337003}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dunham, Scott T. and Plummer, James D.}, year={1986}, month=apr, pages={2541–2550} }