DOI: 10.1063/1.336906. Optical band gap of indium nitride

10.1063/1.336906

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Room-temperature optical absorption data in the 1.5–2.5-eV range are reported for indium nitride thin films prepared by reactive radio-frequency sputtering. The fundamental absorption edge in high-purity material is located at 1.89±0.01 eV and corresponds to a direct transition at k=0, in agreement with band-structure calculations. A significant Moss-Burstein shift is noted for carrier concentrations in excess of 1019 cm−3 and obeys the empirical relationship EG =1.89+2.1×10−8 n1/3 eV.

Bibliography

Tansley, T. L., & Foley, C. P. (1986). Optical band gap of indium nitride. Journal of Applied Physics, 59(9), 3241â3244.

Authors 2

T. L. Tansley (first)
C. P. Foley (additional)

References 20 Referenced 562

{'key': '2024020505232917400_r1'}
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{'key': '2024020505232917400_r5', 'first-page': '1257', 'volume': '11', 'year': '1977', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1977)
{'key': '2024020505232917400_r6'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:05 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 12:23 a.m.)
Indexed	6 days, 11 hours ago (Aug. 20, 2025, 8:41 a.m.)
Issued	39 years, 3 months ago (May 1, 1986)
Published	39 years, 3 months ago (May 1, 1986)
Published Print	39 years, 3 months ago (May 1, 1986)

Funders 0

None

BibTeX

@article{Tansley_1986, title={Optical band gap of indium nitride}, volume={59}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.336906}, DOI={10.1063/1.336906}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Tansley, T. L. and Foley, C. P.}, year={1986}, month=may, pages={3241–3244} }

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