DOI: 10.1063/1.336864. Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition

Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition

10.1063/1.336864

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The band alignment in GaAs:(Al,Ga)As heterostructures has been investigated over the full range of alloy composition. The valence-band discontinuity ΔEv is determined by measuring the activation energy for thermionic emission of holes from p-GaAs over an undoped, square (Al,Ga)As barrier. The use of p-type structures to measure ΔEv circumvents a number of complications involved in the measurement of ΔEc. The parameters required for analysis are determined by different measurements on the same structures and the analysis is performed so that the activation energy, extrapolated to zero bias, yields ΔEv directly. It is found that ΔEv is a linear function of the aluminum mole fraction xAl: ΔEv ≂0.55xAl (eV) (0≤xAl≤1). The validity of these data is supported by measurements of ΔEc in the direct band-gap regime, where complementary values of ΔEv and ΔEc add up to the expected band-gap difference. This relationship provides a simple description of the full band alignment in this heterosystem and should prove valuable as a test of the various heterojunction lineup theories. Moreover, these measurements have a number of important consequences, particularly from the viewpoint of heterojunction devices.

Bibliography

Batey, J., & Wright, S. L. (1986). Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition. Journal of Applied Physics, 59(1), 200â209.

Authors 2

J. Batey (first)
S. L. Wright (additional)

References 50 Referenced 284

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:53 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 12:03 a.m.)
Indexed	3 weeks, 6 days ago (Aug. 6, 2025, 9:40 a.m.)
Issued	39 years, 8 months ago (Jan. 1, 1986)
Published	39 years, 8 months ago (Jan. 1, 1986)
Published Print	39 years, 8 months ago (Jan. 1, 1986)

Funders 0

None

BibTeX

@article{Batey_1986, title={Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition}, volume={59}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.336864}, DOI={10.1063/1.336864}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Batey, J. and Wright, S. L.}, year={1986}, month=jan, pages={200–209} }

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