Abstract
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using complementary metal-oxide semiconductor (CMOS)-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ∼50 meV. This demonstrates the potential of bilayer graphene as channel material for a field-effect transistor in a conventional CMOS environment.
References
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Dates
Type | When |
---|---|
Created | 15 years, 5 months ago (March 17, 2010, 6:15 p.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 7:21 p.m.) |
Indexed | 3 weeks, 6 days ago (July 30, 2025, 6:54 a.m.) |
Issued | 15 years, 5 months ago (March 15, 2010) |
Published | 15 years, 5 months ago (March 15, 2010) |
Published Online | 15 years, 5 months ago (March 17, 2010) |
Published Print | 15 years, 5 months ago (March 15, 2010) |
@article{Szafranek_2010, title={Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3364139}, DOI={10.1063/1.3364139}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Szafranek, B. N. and Schall, D. and Otto, M. and Neumaier, D. and Kurz, H.}, year={2010}, month=mar }