Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

It is shown that photoconductivity transients in a-Si:H measured in a coplanar electrode configuration and by microwave reflection are identical. This proves that transients obtained with these techniques reflect free charge carrier kinetics where the influence of contacts can be neglected. Evidence is given that charge carrier transport is different in the surface layer and in the bulk. The influence of the temperature and the exciting light intensity on transient photoconductivity data are explained by a tentative recombination model which takes dispersive transport of holes and electrons into account.

Bibliography

Kunst, M., & Werner, A. (1985). Comparative study of time-resolved conductivity measurements in hydrogenated amorphous silicon. Journal of Applied Physics, 58(6), 2236–2241.

Authors 2
  1. M. Kunst (first)
  2. A. Werner (additional)
References 19 Referenced 61
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:53 a.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 11:41 p.m.)
Indexed 11 months, 2 weeks ago (Sept. 11, 2024, 12:39 a.m.)
Issued 39 years, 11 months ago (Sept. 15, 1985)
Published 39 years, 11 months ago (Sept. 15, 1985)
Published Print 39 years, 11 months ago (Sept. 15, 1985)
Funders 0

None

@article{Kunst_1985, title={Comparative study of time-resolved conductivity measurements in hydrogenated amorphous silicon}, volume={58}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.335940}, DOI={10.1063/1.335940}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kunst, M. and Werner, A.}, year={1985}, month=sep, pages={2236–2241} }