Abstract
Ion-beam mixing has been studied for the case where all components are collisionally similar. In this study a thin Al marker was mixed by implanting 40-keV 22Ne+ into electron-beam-evaporated Si. The mixing was studied with the nuclear resonance broadening technique. It is characterized by a broadening that is proportional to the square root of ion fluence. The data obtained at room temperature, where the negligible solubilities and thermal diffusivities do not contribute to the intermixing of Al and Si, indicate that even in the absence of the long-range transport there is a diffusion mechanism which enhances the mixing with a magnitude some 3–6 times that expected for ballistic mixing. The data is applicable for preparing Al/Si contacts by Al implantation.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:53 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 4, 2024, 11:49 p.m.) |
Indexed | 1 year, 7 months ago (Feb. 5, 2024, 12:10 a.m.) |
Issued | 39 years, 10 months ago (Oct. 15, 1985) |
Published | 39 years, 10 months ago (Oct. 15, 1985) |
Published Print | 39 years, 10 months ago (Oct. 15, 1985) |
@article{Whitlow_1985, title={Mixing of Al in Si by Ne+ ions}, volume={58}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.335806}, DOI={10.1063/1.335806}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Whitlow, H. J. and Keinonen, J. and Hautala, M.}, year={1985}, month=oct, pages={3246–3248} }