DOI: 10.1063/1.3357398. Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

10.1063/1.3357398

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A quasianalytical modeling approach for graphene metal-oxide-semiconductor field-effect transistors (MOSFETs) with gapless large-area graphene channels is presented. The model allows the calculation of the I-V characteristics, the small-signal behavior, and the cutoff frequency of graphene MOSFETs. It applies a correct formulation of the density of states in large-area graphene to calculate the carrier-density-dependent quantum capacitance, a steady-state velocity-field characteristics with soft saturation to describe the carrier transport, and takes the source/drain series resistances into account. The modeled drain currents and transconductances show very good agreement with experimental data taken from the literature {Meric et al., [Nat. Nanotechnol. 3, 654 (2008)] and Kedzierski et al., [IEEE Electron Device Lett. 30, 745 (2009)]}. In particular, the model properly reproduces the peculiar saturation behavior of graphene MOSFETs with gapless channels.

Bibliography

Thiele, S. A., Schaefer, J. A., & Schwierz, F. (2010). Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels. Journal of Applied Physics, 107(9).

Authors 3

S. A. Thiele (first)
J. A. Schaefer (additional)
F. Schwierz (additional)

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Dates

Type	When
Created	15 years, 3 months ago (May 17, 2010, 6:34 p.m.)
Deposited	2 years, 1 month ago (July 4, 2023, 5:29 p.m.)
Indexed	1 day, 10 hours ago (Aug. 23, 2025, 9:40 p.m.)
Issued	15 years, 3 months ago (May 1, 2010)
Published	15 years, 3 months ago (May 1, 2010)
Published Online	15 years, 3 months ago (May 6, 2010)
Published Print	15 years, 3 months ago (May 1, 2010)

Funders 0

None

BibTeX

@article{Thiele_2010, title={Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels}, volume={107}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3357398}, DOI={10.1063/1.3357398}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Thiele, S. A. and Schaefer, J. A. and Schwierz, F.}, year={2010}, month=may }

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