DOI: 10.1063/1.335263. Metastable phase formation in titanium-silicon thin films

Metastable phase formation in titanium-silicon thin films

10.1063/1.335263

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The formation of TiSi2 thin films on silicon substrates has been investigated with several transmission electron microscope techniques. For films formed either by reacting titanium with a silicon substrate or by sintering a codeposited (Ti+Si) mixture, electron diffraction patterns show that a metastable phase—TiSi2 (C49 or ZrSi2 structure)—forms prior to the equilibrium phase—TiSi2 (C54 structure). High-resolution images indicate that the metastable TiSi2-silicon interface is atomically sharp, with no ‘‘glassy membrane’’ layer present. The annealing temperature required to transform the metastable TiSi2 to the low resistivity, equilibrium TiSi2 increases as the thin-film impurity content increases. Previous studies of TiSi2 formation are discussed in light of these results.

Bibliography

Beyers, R., & Sinclair, R. (1985). Metastable phase formation in titanium-silicon thin films. Journal of Applied Physics, 57(12), 5240â5245.

Authors 2

Robert Beyers (first)
Robert Sinclair (additional)

References 33 Referenced 368

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Dates

Type	When
Created	23 years ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 11:28 p.m.)
Indexed	2 weeks ago (Aug. 6, 2025, 9:22 a.m.)
Issued	40 years, 2 months ago (June 15, 1985)
Published	40 years, 2 months ago (June 15, 1985)
Published Print	40 years, 2 months ago (June 15, 1985)

Funders 0

None

BibTeX

@article{Beyers_1985, title={Metastable phase formation in titanium-silicon thin films}, volume={57}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.335263}, DOI={10.1063/1.335263}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Beyers, Robert and Sinclair, Robert}, year={1985}, month=jun, pages={5240–5245} }

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