DOI: 10.1063/1.334851. Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method

Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method

10.1063/1.334851

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The electron velocity distribution is calculated for an idealized model of the high electron mobility transistor using a many-particle Monte Carlo model and a self-consistent two-dimensional Poisson solver. Hot electron effects, nonstationary effects, and real space transfer are analyzed. The results show that significant velocity overshoot, 2.8×107 cm/s at 300 K and 3.7×107 cm/s at 77 K exists under the gate and that the velocity overshoot is limited by both k-space transfer and real-space transfer. The values of the overshoot velocities are much smaller than those obtained from the more conventional drift-diffusion model.

Bibliography

Wang, T., & Hess, K. (1985). Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method. Journal of Applied Physics, 57(12), 5336â5339.

Authors 2

T. Wang (first)
K. Hess (additional)

References 16 Referenced 68

{'key': '2024020504260755200_r1', 'first-page': '225', 'volume': '19', 'year': '1980', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1980)
10.1143/JJAP.20.L598 / Jpn. J. Appl. Phys. (1981)
{'key': '2024020504260755200_r3', 'first-page': '955', 'volume': 'ED-29', 'year': '1982', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1982)
{'key': '2024020504260755200_r4', 'first-page': '152', 'volume': 'EDL-3', 'year': '1982', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1982)
10.1143/JJAP.22.L82 / Jpn. J. Appl. Phys. (1983)
10.1049/el:19810027 / Electron. Lett. (1981)
{'key': '2024020504260755200_r7', 'first-page': '794', 'volume': '8', 'year': '1982', 'journal-title': 'Electron. Lett.'} / Electron. Lett. (1982)
{'key': '2024020504260755200_r8', 'first-page': '266', 'volume': 'EDL-5', 'year': '1984', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1984)
{'key': '2024020504260755200_r9'}
{'key': '2024020504260755200_r10', 'first-page': '937', 'volume': 'ED-28', 'year': '1981', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1981)
10.1063/1.91172 / Appl. Phys. Lett. (1979)
{'key': '2024020504260755200_r11a', 'first-page': '729', 'volume': '117B', 'year': '1983', 'journal-title': 'Physica'} / Physica (1983)
10.1016/0038-1101(83)90016-3 / Solid State Electron. (1983)
{'key': '2024020504260755200_r13'}
10.1143/JPSJ.47.861 / Jpn. J. Phys. Soc. (1979)
{'key': '2024020504260755200_r15'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 11:26 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 10:58 p.m.)
Issued	40 years, 2 months ago (June 15, 1985)
Published	40 years, 2 months ago (June 15, 1985)
Published Print	40 years, 2 months ago (June 15, 1985)

Funders 0

None

BibTeX

@article{Wang_1985, title={Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method}, volume={57}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.334851}, DOI={10.1063/1.334851}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Wang, T. and Hess, K.}, year={1985}, month=jun, pages={5336–5339} }

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