DOI: 10.1063/1.334765. Effect of Coulomb scattering in <i>n</i>-type silicon inversion layers

Effect of Coulomb scattering in n-type silicon inversion layers

10.1063/1.334765

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Experimental results of surface mobility (effective mobility) in n-channel metal-oxide-semiconductor field-effect transistors subjected to high electric field stress are presented. The electron mobility limited by Coulomb scattering is extracted from the experimental data comparing the measured effective mobility before and after the stress. The low-temperature data (T=77 K) are discussed in terms of the Stern–Howard two-dimensional Coulomb scattering theory in the electric quantum limit approximation.

Bibliography

Manzini, S. (1985). Effect of Coulomb scattering in n-type silicon inversion layers. Journal of Applied Physics, 57(2), 411â414.

Authors 1

S. Manzini (first)

References 12 Referenced 25

{'key': '2024020503383242400_r1'}
10.1063/1.93128 / Appl. Phys. Lett. (1982)
{'key': '2024020503383242400_r3', 'first-page': '1497', 'volume': 'ED-27', 'year': '1980', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1980)
{'key': '2024020503383242400_r4'}
10.1063/1.328565 / J. Appl. Phys. (1981)
{'key': '2024020503383242400_r6'}
{'key': '2024020503383242400_r7'}
10.1103/PhysRev.93.693 / Phys. Rev. (1954)
10.1016/0039-6028(72)90183-5 / Surf. Sci. (1972)
10.1103/PhysRev.163.816 / Phys. Rev. (1967)
{'key': '2024020503383242400_r11', 'first-page': '4981', 'volume': '5', 'year': '1972', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1972)
{'key': '2024020503383242400_r12', 'first-page': '187', 'volume': '44', 'year': '1973', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1973)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:51 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 10:38 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 11:10 p.m.)
Issued	40 years, 7 months ago (Jan. 15, 1985)
Published	40 years, 7 months ago (Jan. 15, 1985)
Published Print	40 years, 7 months ago (Jan. 15, 1985)

Funders 0

None

BibTeX

@article{Manzini_1985, title={Effect of Coulomb scattering in n-type silicon inversion layers}, volume={57}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.334765}, DOI={10.1063/1.334765}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Manzini, S.}, year={1985}, month=jan, pages={411–414} }

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