DOI: 10.1063/1.3345684. Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors

Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors

10.1063/1.3345684

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Self-heating effects are investigated in silicon-on-insulator (SOI), silicon-germanium-on-insulator (SGOI), and strained-silicon-directly-on-insulator (SSDOI) metal-oxide field-effect transistors (MOSFETs), using a Monte Carlo simulator self-consistently coupled with the solution of the heat diffusion equation. Although the influence of thermal effects is in general higher in these structures, as compared to bulk Si MOSFETs, its impact is much more important in SGOI and SSDOI FET structures incorporating ultrathin Si channels, with SGOI FETs giving the worst thermal performance. A study of the dependence of the extent of self-heating on the buried-oxide thickness is also performed, showing that this parameter is important in designing SOI structures with better thermal management.

Bibliography

Sadi, T., & Kelsall, R. W. (2010). Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors. Journal of Applied Physics, 107(6).

Authors 2

Toufik Sadi (first)
Robert W. Kelsall (additional)

References 34 Referenced 19

10.1103/PhysRev.125.44 / Phys. Rev. (1962)
{'volume': '2003', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '3', 'key': '2023070423031431600_c2'} / Tech. Dig. - Int. Electron Devices Meet.
{'year': '2006', 'key': '2023070423031431600_c3', 'first-page': '438'} (2006)
10.1016/j.mseb.2005.08.062 / Mater. Sci. Eng., B (2005)
10.1088/0268-1242/19/4/068 / Semicond. Sci. Technol. (2004)
10.1016/j.sse.2003.09.029 / Solid-State Electron. (2004)
10.1023/B:RUMI.0000033824.00127.7b / Russ. Microelectron. (2004)
10.1023/A:1024523531727 / Russ. Microelectron. (2003)
10.1023/A:1020729625444 / J. Comput. Elec. (2002)
10.1109/16.669557 / IEEE Trans. Electron Devices (1998)
10.1109/55.468289 / IEEE Electron Device Lett. (1995)
10.1109/55.285411 / IEEE Electron Device Lett. (1994)
10.1109/16.19963 / IEEE Trans. Electron Devices (1989)
10.1109/LED.2004.825192 / IEEE Electron Device Lett. (2004)
{'year': '2003', 'key': '2023070423031431600_c15', 'first-page': '161'} (2003)
10.1109/LED.2002.805755 / IEEE Electron Device Lett. (2002)
10.1109/16.259622 / IEEE Trans. Electron Devices (1994)
{'volume-title': 'Silicon-On-Insulator Technology', 'year': '1997', 'key': '2023070423031431600_c18'} / Silicon-On-Insulator Technology (1997)
10.1109/16.19959 / IEEE Trans. Electron Devices (1989)
10.1109/TED.2005.856806 / IEEE Trans. Electron Devices (2005)
10.1103/PhysRev.134.A1058 / Phys. Rev. (1964)
10.1109/TED.2006.877698 / IEEE Trans. Electron Devices (2006)
10.1109/TED.2006.885099 / IEEE Trans. Electron Devices (2006)
10.1109/TED.2008.916677 / IEEE Trans. Electron Devices (2008)
10.1109/TED.2006.888628 / IEEE Trans. Electron Devices (2007)
10.1063/1.365696 / J. Appl. Phys. (1997)
10.1109/16.310101 / IEEE Trans. Electron Devices (1994)
10.1109/LED.2007.903920 / IEEE Electron Device Lett. (2007)
10.1007/978-1-4615-4026-7 / Monte Carlo Device Simulation: Full Band and Beyond by Hess (1991)
{'volume-title': 'Semiconductor Transport', 'year': '2000', 'key': '2023070423031431600_c30'} / Semiconductor Transport (2000)
10.1109/55.6947 / IEEE Electron Device Lett. (1988)
{'year': '2002', 'key': '2023070423031431600_c32', 'first-page': '51'} (2002)
10.1063/1.2653777 / J. Appl. Phys. (2007)
{'volume-title': 'Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe', 'year': '2001', 'author': 'Levinshtein', 'key': '2023070423031431600_c34'} / Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe by Levinshtein (2001)

Dates

Type	When
Created	15 years, 4 months ago (March 29, 2010, 6:43 p.m.)
Deposited	2 years, 1 month ago (July 5, 2023, 7:35 a.m.)
Indexed	4 weeks ago (July 30, 2025, 6:54 a.m.)
Issued	15 years, 5 months ago (March 15, 2010)
Published	15 years, 5 months ago (March 15, 2010)
Published Online	15 years, 4 months ago (March 29, 2010)
Published Print	15 years, 5 months ago (March 15, 2010)

Funders 0

None

BibTeX

@article{Sadi_2010, title={Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors}, volume={107}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3345684}, DOI={10.1063/1.3345684}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sadi, Toufik and Kelsall, Robert W.}, year={2010}, month=mar }

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