DOI: 10.1063/1.334548. Interstitial and vacancy concentrations in the presence of interstitial injection

Interstitial and vacancy concentrations in the presence of interstitial injection

10.1063/1.334548

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

In processes such as thermal oxidation and phosphorus diffusion, where self-interstitials are generated in excess, what happens to the vacancy concentration may significantly affect many diffusion processes which occur via dual mechanisms. Most authors in diffusion modelling have assumed as self-evident that, for a very long time or in steady state, the product of the vacancy and the interstitial concentrations should be a constant. It is shown here that this assumption is generally invalid. The fallacy in the analogy between this case and the solubility product is pointed out. A correct relationship is first derived on a uniform defect concentration approximation. Then rigorous expressions for both the vacancy and the interstitial concentrations are given from an exact solution of simultaneous vacancy and interstitial continuity equations that include diffusion, recombination, and generation terms, under appropriate boundary conditions. The errors in the results from previous speculations are especially severe in the surface region.

Bibliography

Hu, S. M. (1985). Interstitial and vacancy concentrations in the presence of interstitial injection. Journal of Applied Physics, 57(4), 1069â1075.

Authors 1

S. M. Hu (first)

References 27 Referenced 54

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:53 a.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 10:42 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:08 a.m.)
Issued	40 years, 6 months ago (Feb. 15, 1985)
Published	40 years, 6 months ago (Feb. 15, 1985)
Published Print	40 years, 6 months ago (Feb. 15, 1985)

Funders 0

None

BibTeX

@article{Hu_1985, title={Interstitial and vacancy concentrations in the presence of interstitial injection}, volume={57}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.334548}, DOI={10.1063/1.334548}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hu, S. M.}, year={1985}, month=feb, pages={1069–1075} }

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