DOI: 10.1063/1.334033. Ledge growth, strain accommodation, and stacking fault formation during silicon oxidation

Ledge growth, strain accommodation, and stacking fault formation during silicon oxidation

10.1063/1.334033

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A detailed ledge model is presented to describe the oxidation of single-crystal silicon. Volume strains are completely accommodated as a consequence of the model. Interface dislocations at the silicon-oxide interface result with attendant short-range strain fields. The model leads to an explanation of the observed anisotropic stacking fault distributions among available {111} planes when orientations slightly removed from low index surfaces are oxidized.

Bibliography

Hirth, J. P., & Tiller, W. A. (1984). Ledge growth, strain accommodation, and stacking fault formation during silicon oxidation. Journal of Applied Physics, 56(4), 947â952.

Authors 2

John P. Hirth (first)
William A. Tiller (additional)

References 29 Referenced 17

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{'key': '2024020503174377000_r28'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 2:07 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 10:17 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 11:23 a.m.)
Issued	41 years ago (Aug. 15, 1984)
Published	41 years ago (Aug. 15, 1984)
Published Print	41 years ago (Aug. 15, 1984)

Funders 0

None

BibTeX

@article{Hirth_1984, title={Ledge growth, strain accommodation, and stacking fault formation during silicon oxidation}, volume={56}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.334033}, DOI={10.1063/1.334033}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hirth, John P. and Tiller, William A.}, year={1984}, month=aug, pages={947–952} }

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