Abstract
Photoluminescence studies at 4 K on Ga0.47In0.53As/ Al0.48In0.52As single quantum wells exhibit emission ranging from 1.318 eV for a 15-Å well to 0.82 eV for thick wells. The emission energy of each single quantum well is compared to theoretical curves which are generated from a finite potential square well model. The closest agreement between the experimental curves and the theoretical curves occurs when the conduction band discontinuity is taken to be 70% of the band-gap discontinuity or 0.52 eV.
References
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 14, 2003, 1:52 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 9:58 p.m.) |
Indexed | 1 year, 1 month ago (July 5, 2024, 3:14 p.m.) |
Issued | 41 years, 4 months ago (April 15, 1984) |
Published | 41 years, 4 months ago (April 15, 1984) |
Published Print | 41 years, 4 months ago (April 15, 1984) |
@article{Welch_1984, title={Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction}, volume={55}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.333348}, DOI={10.1063/1.333348}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Welch, D. F. and Wicks, G. W. and Eastman, L. F.}, year={1984}, month=apr, pages={3176–3179} }