DOI: 10.1063/1.333142. Stress evolution and point defect generation during oxidation of silicon

Stress evolution and point defect generation during oxidation of silicon

10.1063/1.333142

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The oxidation enhanced diffusion and oxidation stacking faults are assumed to be brought about by a self-interstitial supersaturation in the silicon. In such a case, supersaturation is related to the stresses present in the oxide and in the silicon during oxidation. The detailed analysis of the evolution of these stresses is conducted in relation to time, temperature and the nature of the oxidizing atmosphere, taking into account the viscous relaxation in the oxide. The silicon interstitial concentration during oxidation is directly linked with the stress in the silicon. This stress, which is a function of the stress evolution in the oxide enables us to describe qualitatively the experimental behavior of OED and OSF. However, quantitative analysis of stresses in silicon gives values insufficient to lead to a non-negligible self-interstitials concentration.

Bibliography

Charitat, G., & Martinez, A. (1984). Stress evolution and point defect generation during oxidation of silicon. Journal of Applied Physics, 55(4), 909â913.

Authors 2

G. Charitat (first)
A. Martinez (additional)

References 26 Referenced 31

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{'key': '2024020502353731700_r9'}
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{'key': '2024020502353731700_r23'}
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 1:52 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 9:35 p.m.)
Indexed	4 weeks, 1 day ago (July 25, 2025, 6:42 a.m.)
Issued	41 years, 6 months ago (Feb. 15, 1984)
Published	41 years, 6 months ago (Feb. 15, 1984)
Published Print	41 years, 6 months ago (Feb. 15, 1984)

Funders 0

None

BibTeX

@article{Charitat_1984, title={Stress evolution and point defect generation during oxidation of silicon}, volume={55}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.333142}, DOI={10.1063/1.333142}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Charitat, G. and Martinez, A.}, year={1984}, month=feb, pages={909–913} }

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