Abstract
We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole-doped domain close to one of the metal contacts combined with underlying striations in the local NP.
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Dates
Type | When |
---|---|
Created | 15 years, 5 months ago (March 16, 2010, 11:27 a.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 7:26 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:55 a.m.) |
Issued | 15 years, 5 months ago (March 15, 2010) |
Published | 15 years, 5 months ago (March 15, 2010) |
Published Online | 15 years, 5 months ago (March 15, 2010) |
Published Print | 15 years, 5 months ago (March 15, 2010) |
@article{Connolly_2010, title={Scanning gate microscopy of current-annealed single layer graphene}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3327829}, DOI={10.1063/1.3327829}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Connolly, M. R. and Chiou, K. L. and Smith, C. G. and Anderson, D. and Jones, G. A. C. and Lombardo, A. and Fasoli, A. and Ferrari, A. C.}, year={2010}, month=mar }