DOI: 10.1063/1.332738. Theory of hot electron emission from silicon into silicon dioxide

Theory of hot electron emission from silicon into silicon dioxide

10.1063/1.332738

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We present Monte Carlo simulations of the hot electron emission from silicon into the oxide of metal oxide silicon transistors. The calculations include the pseudopotential band structure and quantum effects such as collision broadening due to the electron–phonon interaction. As a result, we present a set of transport parameters which well describes all hot electron effects in silicon (including saturation velocity and impact ionization). We also show that the collision broadening effect leads to an effective barrier lowering and may require that voltages be scaled down far below the interface barrier height of ∼3.1 V in order to avoid hot electron emission.

Bibliography

Tang, J. Y., & Hess, K. (1983). Theory of hot electron emission from silicon into silicon dioxide. Journal of Applied Physics, 54(9), 5145â5151.

Authors 2

J. Y. Tang (first)
Karl Hess (additional)

References 14 Referenced 71

{'key': '2024020502190484700_r1'}
{'key': '2024020502190484700_r2', 'first-page': '871', 'volume': 'ED-17', 'year': '1970', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1970)
10.1063/1.1652996 / Appl. Phys. Lett. (1969)
10.1109/PROC.1976.10272 / Proc. IEEE (1976)
{'key': '2024020502190484700_r5', 'first-page': '286', 'volume': '48', 'year': '1976', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1976)
10.1016/0038-1101(78)90148-X / Solid-State Electron. (1978)
{'key': '2024020502190484700_r7'}
10.1063/1.1663246 / J. Appl. Phys. (1974)
10.1016/0038-1101(61)90054-5 / Solid-State Electron. (1961)
{'key': '2024020502190484700_r10'}
10.1063/1.332737 / J. Appl. Phys. (1983)
10.1103/PhysRev.141.789 / Phys. Rev. (1966)
10.1063/1.93732 / Appl. Phys. Lett. (1983)
10.1103/PhysRev.134.A761 / Phys. Rev. A (1964)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 1:32 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 9:19 p.m.)
Indexed	4 months, 4 weeks ago (March 24, 2025, 2:38 a.m.)
Issued	41 years, 11 months ago (Sept. 1, 1983)
Published	41 years, 11 months ago (Sept. 1, 1983)
Published Print	41 years, 11 months ago (Sept. 1, 1983)

Funders 0

None

BibTeX

@article{Tang_1983, title={Theory of hot electron emission from silicon into silicon dioxide}, volume={54}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.332738}, DOI={10.1063/1.332738}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Tang, J. Y. and Hess, Karl}, year={1983}, month=sep, pages={5145–5151} }

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