DOI: 10.1063/1.332715. X-ray-induced luminescence in crystalline SiO2

X-ray-induced luminescence in crystalline SiO2

10.1063/1.332715

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The x-ray-induced ‘‘blue’’ emission from commercially available, high-quality synthetic quartz has been studied between 80 and 300 K. Three overlapping bands, each having a different quenching temperature, have been experimentally resolved in the as-grown crystals. These bands peak at 440, 425, and 380 nm; their half-widths are 0.64, 0.75, and 0.92 eV; and they thermally quench in the 120–160, 170–210, and 220–270 K regions, respectively. An intense electron irradiation at room temperature or an electrodiffusion (sweep) in a hydrogen atmosphere eliminates the band at 380 nm. Our results suggest that the 380-nm band arises from recombination of an electron with a hole trapped adjacent to an alkali-compensated aluminum ion (i.e., an Al–M+ center). The origins of the bands at 440 and 425 nm remain unknown. As an application of these results, a screening test is described which could assist quality control during selection of quartz bars for use in precision frequency control devices.

Bibliography

Alonso, P. J., Halliburton, L. E., Kohnke, E. E., & Bossoli, R. B. (1983). X-ray-induced luminescence in crystalline SiO2. Journal of Applied Physics, 54(9), 5369â5375.

Authors 4

P. J. Alonso (first)
L. E. Halliburton (additional)
E. E. Kohnke (additional)
R. B. Bossoli (additional)

References 16 Referenced 99

10.1080/00337577508232993 / Radiat. Eff. (1975)
{'key': '2024020502151765500_r2'}
10.1080/00337577508232999 / Radiat. Eff. (1975)
10.1063/1.329138 / J. Appl. Phys. (1981)
10.1080/00337577508232997 / Radiat. Eff. (1975)
{'key': '2024020502151765500_r6', 'first-page': '372', 'volume': '13', 'year': '1973/1974', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1973/1974)
{'key': '2024020502151765500_r7'}
{'key': '2024020502151765500_r8', 'first-page': '644', 'volume': '21', 'year': '1979', 'journal-title': 'Sov. Phys. Solid State'} / Sov. Phys. Solid State (1979)
{'key': '2024020502151765500_r9', 'first-page': '222', 'volume': '23', 'year': '1981', 'journal-title': 'Sov. Phys. Solid State'} / Sov. Phys. Solid State (1981)
10.1103/PhysRevLett.42.1346 / Phys. Rev. Lett. (1979)
10.1063/1.325957 / J. Appl. Phys. (1979)
10.1139/p81-227 / Can. J. Phys. (1981)
10.1063/1.329092 / J. Appl. Phys. (1981)
10.1063/1.1734035 / J. Chem. Phys. (1963)
10.1139/p81-228 / Can. J. Phys. (1981)
10.1139/p81-249 / Can. J. Phys. (1981)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 1:32 p.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 9:15 p.m.)
Indexed	3 months, 1 week ago (May 28, 2025, 10:03 a.m.)
Issued	42 years ago (Sept. 1, 1983)
Published	42 years ago (Sept. 1, 1983)
Published Print	42 years ago (Sept. 1, 1983)

Funders 0

None

BibTeX

@article{Alonso_1983, title={X-ray-induced luminescence in crystalline SiO2}, volume={54}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.332715}, DOI={10.1063/1.332715}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Alonso, P. J. and Halliburton, L. E. and Kohnke, E. E. and Bossoli, R. B.}, year={1983}, month=sep, pages={5369–5375} }

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