DOI: 10.1063/1.332611. Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si

Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si

10.1063/1.332611

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The effect of thermal nitridation on impurity diffusion and Oxidation induced Stacking Fault size in Si are clarified by selective nitridation. Enhanced B and P diffusion, retarded Sb diffusion, and growth of OSF’s are found in Si masked with SiO2 films. Retarded B and P diffusion, enhanced Sb diffusion and rapid OSF shrinkage are found in nonmasked Si that has undergone NH3 heat treatment. On the other hand, in N2 or N2+H2 (1:3) ambients, no significant ambient effect on impurity diffusion is found in Si masked with SiO2 films. However, retarded B and P diffusion and enhanced Sb diffusion are found in nonmasked Si with N2 ambient. The results are shown to be consistent with the model that shows that interstitials and vacancies effect thermal equilibrium.

Bibliography

Mizuo, S., Kusaka, T., Shintani, A., Nanba, M., & Higuchi, H. (1983). Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si. Journal of Applied Physics, 54(7), 3860â3866.

Authors 5

Shoichi Mizuo (first)
Takahisa Kusaka (additional)
Akira Shintani (additional)
Mitsuo Nanba (additional)
Hisayuki Higuchi (additional)

References 16 Referenced 65

10.1016/0038-1101(71)90190-0 / Solid-State Electron. (1971)
10.1080/14786437608221123 / Philos. Mag. (1976)
10.1149/1.2123940 / J. Electrochem. Soc. (1982)
10.1143/JJAP.21.56 / Jpn. J. Appl. Phys. (1982)
10.5796/kogyobutsurikagaku.50.338 / Denki Kagaku (1982)
10.1143/JJAP.20.739 / Jpn. J. Appl. Phys. (1981)
10.1063/1.88441 / Appl. Phys. Lett. (1975)
{'key': '2024020502092053100_r8', 'first-page': '449', 'volume': '125', 'year': '1978', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1978)
10.1149/1.2130065 / J. Electrochem. Soc. (1980)
{'key': '2024020502092053100_r10'}
10.1149/1.2127433 / J. Electrochem. Soc. (1981)
10.1149/1.2133401 / J. Electrochem. Soc. (1977)
10.1143/JJAP.9.848 / Jpn. J. Appl. Phys. (1970)
{'key': '2024020502092053100_r14'}
{'key': '2024020502092053100_r15'}
{'key': '2024020502092053100_r16'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 1:32 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 9:09 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 10:20 a.m.)
Issued	42 years, 1 month ago (July 1, 1983)
Published	42 years, 1 month ago (July 1, 1983)
Published Print	42 years, 1 month ago (July 1, 1983)

Funders 0

None

BibTeX

@article{Mizuo_1983, title={Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si}, volume={54}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.332611}, DOI={10.1063/1.332611}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Mizuo, Shoichi and Kusaka, Takahisa and Shintani, Akira and Nanba, Mitsuo and Higuchi, Hisayuki}, year={1983}, month=jul, pages={3860–3866} }

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