Abstract
Rod-like defects in annealed oxygen rich silicon crystals grown by the Czochralski method were investigated by means of transmission electron microscopy. The rod-like defect has an apparent Burgers vector along 〈100〉 and gives a dipole-like contrast. The rod defect plane is 〈100〉 and its character is found to be extrinsic. The clearly resolved dipoles associated with the rod-like defect consist of perfect dislocations and are interstitial in character. The rod-like defects are tentatively attributed to some form of SiOx precipitate.
References
10
Referenced
17
10.1002/pssa.2210270125
/ Phys. Status Solidi A (1975)10.1016/0022-0248(80)90304-8
/ J. Cryst. Growth (1980)10.1063/1.323241
/ J. Appl. Phys. (1976){'key': '2024020502061691800_r4'}
{'key': '2024020502061691800_r5', 'first-page': '754', 'volume': '20', 'year': '1980', 'journal-title': 'J. Electrochem. Soc.'}
/ J. Electrochem. Soc. (1980)10.1080/14786437108216394
/ Philos. Mag. (1971){'key': '2024020502061691800_r7'}
10.1080/00337577208231212
/ Radiat. Eff. (1972){'key': '2024020502061691800_r9', 'first-page': '39', 'volume': '7', 'year': '1977', 'journal-title': 'Cryst. Lattice Def.'}
/ Cryst. Lattice Def. (1977){'key': '2024020502061691800_r10'}
Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 14, 2003, 1:32 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 9:06 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 5, 2024, 12:27 a.m.) |
Issued | 42 years, 2 months ago (June 1, 1983) |
Published | 42 years, 2 months ago (June 1, 1983) |
Published Print | 42 years, 2 months ago (June 1, 1983) |
@article{Yamamoto_1983, title={Rod-like defects in oxygen-rich Czochralski grown silicon}, volume={54}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.332411}, DOI={10.1063/1.332411}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yamamoto, N. and Petroff, P. M. and Patel, J. R.}, year={1983}, month=jun, pages={3475–3478} }