Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

Rod-like defects in annealed oxygen rich silicon crystals grown by the Czochralski method were investigated by means of transmission electron microscopy. The rod-like defect has an apparent Burgers vector along 〈100〉 and gives a dipole-like contrast. The rod defect plane is 〈100〉 and its character is found to be extrinsic. The clearly resolved dipoles associated with the rod-like defect consist of perfect dislocations and are interstitial in character. The rod-like defects are tentatively attributed to some form of SiOx precipitate.

Bibliography

Yamamoto, N., Petroff, P. M., & Patel, J. R. (1983). Rod-like defects in oxygen-rich Czochralski grown silicon. Journal of Applied Physics, 54(6), 3475–3478.

Authors 3
  1. N. Yamamoto (first)
  2. P. M. Petroff (additional)
  3. J. R. Patel (additional)
References 10 Referenced 17
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 1:32 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 9:06 p.m.)
Indexed 1 year, 6 months ago (Feb. 5, 2024, 12:27 a.m.)
Issued 42 years, 2 months ago (June 1, 1983)
Published 42 years, 2 months ago (June 1, 1983)
Published Print 42 years, 2 months ago (June 1, 1983)
Funders 0

None

@article{Yamamoto_1983, title={Rod-like defects in oxygen-rich Czochralski grown silicon}, volume={54}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.332411}, DOI={10.1063/1.332411}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yamamoto, N. and Petroff, P. M. and Patel, J. R.}, year={1983}, month=jun, pages={3475–3478} }