Abstract
Atomically resolved scanning tunneling microscope images of carbon ridge defects found in few-layer graphene formed on the C-face (0001¯) of 4H-silicon carbide reveal a striated exterior surface formed from out-of-plane distortions of the hexagonal graphene lattice. While ridge formation is likely explained by compressive in-plane stresses coupled with the small values of the bending modulus for few-layer graphene, the striated structure along the ridges argues for a localized unidirectional stress in the material directed along the ridge length.
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Dates
Type | When |
---|---|
Created | 15 years, 6 months ago (Feb. 23, 2010, 10:43 a.m.) |
Deposited | 2 years, 2 months ago (June 27, 2023, 11:29 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:54 a.m.) |
Issued | 15 years, 6 months ago (Feb. 22, 2010) |
Published | 15 years, 6 months ago (Feb. 22, 2010) |
Published Online | 15 years, 6 months ago (Feb. 22, 2010) |
Published Print | 15 years, 6 months ago (Feb. 22, 2010) |
@article{Harrison_2010, title={Scanning tunneling microscope study of striated carbon ridges in few-layer epitaxial graphene formed on 4H-silicon carbide (0001¯)}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3323092}, DOI={10.1063/1.3323092}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Harrison, S. E. and Capano, M. A. and Reifenberger, R.}, year={2010}, month=feb }