DOI: 10.1063/1.331919. Deep levels related to ion-implanted tellurium in silicon

Deep levels related to ion-implanted tellurium in silicon

10.1063/1.331919

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Deep impurity levels due to ion-implanted tellurium in n–silicon are studied. Two donor levels at Ec−0.13 and Ec−0.56 eV are obtained using deep level transient spectroscopy. Thermal electron capture cross sections for both levels are too large to be measured. Electron photoionization cross section spectrum confirms the Ec−0.56 level and also reveals an excited state 0.45 eV above the ground state.

Bibliography

Kalyanaraman, V., Mohan Chandra, M., & Kumar, V. (1983). Deep levels related to ion-implanted tellurium in silicon. Journal of Applied Physics, 54(11), 6417â6420.

Authors 3

V. Kalyanaraman (first)
M. Mohan Chandra (additional)
Vikram Kumar (additional)

References 27 Referenced 8

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{'key': '2024020502223073200_r5', 'first-page': '1899', 'volume': '2', 'year': '1970', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1970)
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{'key': '2024020502223073200_r27'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 1:32 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 9:22 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 10:55 p.m.)
Issued	41 years, 9 months ago (Nov. 1, 1983)
Published	41 years, 9 months ago (Nov. 1, 1983)
Published Print	41 years, 9 months ago (Nov. 1, 1983)

Funders 0

None

BibTeX

@article{Kalyanaraman_1983, title={Deep levels related to ion-implanted tellurium in silicon}, volume={54}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.331919}, DOI={10.1063/1.331919}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kalyanaraman, V. and Mohan Chandra, M. and Kumar, Vikram}, year={1983}, month=nov, pages={6417–6420} }

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