DOI: 10.1063/1.331877. Current transport in semiconductor-electrolyte barriers: Surface recombination and photovoltaic applications

Current transport in semiconductor-electrolyte barriers: Surface recombination and photovoltaic applications

10.1063/1.331877

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A general analysis is given for the effects of illumination and surface recombination on the currents flowing in a semiconductor/conductor junction. The behavior of the electron and hole quasi-Fermi levels is examined and it is shown that a priori assumptions about their flatness in the depletion region leads to contradictions in the analysis. The two theories describing currents in a Schottky barrier junction, the thermionic emission theory and the diffusion theory of Shockley are shown to have their parallels in a semiconductor/electrolyte contact. A Shockley–Read–Hall model for surface recombination was employed in the analysis and it was shown that this model reduces to the expression for surface recombination often used in the literature under certain conditions.

Bibliography

El Guibaly, F., & Colbow, K. (1983). Current transport in semiconductor-electrolyte barriers: Surface recombination and photovoltaic applications. Journal of Applied Physics, 54(11), 6488â6491.

Authors 2

Fayez El Guibaly (first)
Konrad Colbow (additional)

References 21 Referenced 13

10.1063/1.323948 / J. Appl. Phys. (1977)
10.1063/1.323417 / J. Appl. Phys. (1977)
10.1149/1.2131595 / J. Electrochem. Soc. (1978)
10.1063/1.91551 / Appl. Phys. Lett. (1980)
10.1063/1.92333 / Appl. Phys. Lett. (1981)
10.1063/1.329124 / J. Appl. Phys. (1981)
10.1063/1.329429 / J. Appl. Phys. (1981)
10.1139/p81-224 / Can. J. Phys. (1981)
10.1063/1.329351 / J. Appl. Phys. (1981)
10.1063/1.331642 / J. Appl. Phys. (1982)
10.1149/1.2124042 / J. Electrochem. Soc. (1982)
{'key': '2024020502274017400_r12'}
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10.1080/10408438008243628 / CRC Crit. Rev. Solid State Mater. Sci. (1980)
10.1149/1.2129624 / J. Electrochem. Soc. (1980)
10.1109/T-ED.1980.19927 / IEEE Trans. Electron Devices (1980)
10.1016/0038-1101(71)90027-X / Solid-State Electron. (1971)
10.1088/0022-3727/5/10/324 / J. Phys. D (1972)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 1:32 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 9:27 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 9:40 p.m.)
Issued	41 years, 9 months ago (Nov. 1, 1983)
Published	41 years, 9 months ago (Nov. 1, 1983)
Published Print	41 years, 9 months ago (Nov. 1, 1983)

Funders 0

None

BibTeX

@article{El_Guibaly_1983, title={Current transport in semiconductor-electrolyte barriers: Surface recombination and photovoltaic applications}, volume={54}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.331877}, DOI={10.1063/1.331877}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={El Guibaly, Fayez and Colbow, Konrad}, year={1983}, month=nov, pages={6488–6491} }

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