Charge collection scanning electron microscopy
10.1063/1.331667
Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

This review encompasses the application of the scanning electron microscope to the study and characterization of semiconductor materials and devices by the Electron Beam Induced Conductivity (EBIC) method. In this technique, the charge carriers generated by the electron beam of the microscope are collected by an electric field within the material and sensed as a current in an external circuit. When employed as the video signal of the SEM, this collected current image reveals inhomogeneities in the electrical properties of the material. The technique has been used to determine carrier lifetime, diffusion length, defect energy levels, and surface recombination velocities. Charge collection images reveal the location of p-n junctions, recombination sites such as dislocations and precipitates, and the presence of doping level inhomogeneities. Both the theoretical foundation and the practical aspects of these effects are discussed in a tutorial fashion in this review.

Bibliography

Leamy, H. J. (1982). Charge collection scanning electron microscopy. Journal of Applied Physics, 53(6), R51–R80.

Authors 1
  1. H. J. Leamy (first)
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 8:05 p.m.)
Indexed 2 weeks, 2 days ago (Aug. 7, 2025, 4:42 p.m.)
Issued 43 years, 2 months ago (June 1, 1982)
Published 43 years, 2 months ago (June 1, 1982)
Published Print 43 years, 2 months ago (June 1, 1982)
Funders 0

None

@article{Leamy_1982, title={Charge collection scanning electron microscopy}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.331667}, DOI={10.1063/1.331667}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Leamy, H. J.}, year={1982}, month=jun, pages={R51–R80} }