DOI: 10.1063/1.331328. Manganese incorporation behavior in molecular beam epitaxial gallium arsenide

Manganese incorporation behavior in molecular beam epitaxial gallium arsenide

10.1063/1.331328

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A secondary ion mass spectrometric study of the substrate temperature and As4/Ga flux-ratio dependence of the chemical incorporation behavior of manganese in molecular beam epitaxial GaAs is presented. At molecular beam epitaxial growth temperatures, manganese competitively surface segregates, desorbs, and complexes with As at the surface. No significant diffusion was observed. The incorporation model of Wood et al. qualitatively explains the observed behavior.

Bibliography

DeSimone, D., Wood, C. E. C., & Evans, C. A. (1982). Manganese incorporation behavior in molecular beam epitaxial gallium arsenide. Journal of Applied Physics, 53(7), 4938â4942.

Authors 3

D. DeSimone (first)
C. E. C. Wood (additional)
C. A. Evans (additional)

References 21 Referenced 34

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{'key': '2024020501044483700_r3', 'first-page': '831', 'volume': '8', 'year': '1971', 'journal-title': 'J. Vac. Sci. Technol.'} / J. Vac. Sci. Technol. (1971)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 8:04 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:25 a.m.)
Issued	43 years, 1 month ago (July 1, 1982)
Published	43 years, 1 month ago (July 1, 1982)
Published Print	43 years, 1 month ago (July 1, 1982)

Funders 0

None

BibTeX

@article{DeSimone_1982, title={Manganese incorporation behavior in molecular beam epitaxial gallium arsenide}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.331328}, DOI={10.1063/1.331328}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={DeSimone, D. and Wood, C. E. C. and Evans, C. A.}, year={1982}, month=jul, pages={4938–4942} }

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