DOI: 10.1063/1.330619. Electrical and optical properties of tin oxide films doped with F and (Sb+F)

Electrical and optical properties of tin oxide films doped with F and (Sb+F)

10.1063/1.330619

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

This paper presents the structural, electrical, and optical properties of F- and (Sb+F)-doped tin oxide films prepared by spray pyrolysis technique. Resistivity as low as 5.5×10−4 Ω cm with high optical transmission (≳80%) and high infrared reflection (∼90%) have been obtained in F-doped tin oxide films. The figure of merit ΦTC = T10/Rsh (52.6×10−3Ω−1 at 0.65μm) of these films is the highest amongst the results reported on doped tin oxide films. The variation of mobility with doping concentration has been analyzed to understand the electron–conduction mechanism. The Drude theory has been used to explain the optical properties near the plasma edge.

Bibliography

Shanthi, E., Banerjee, A., Dutta, V., & Chopra, K. L. (1982). Electrical and optical properties of tin oxide films doped with F and (Sb+F). Journal of Applied Physics, 53(3), 1615â1621.

Authors 4

E. Shanthi (first)
A. Banerjee (additional)
V. Dutta (additional)
K. L. Chopra (additional)

References 19 Referenced 215

{'key': '2024020500334058100_r1'}
10.1016/0025-5408(79)90238-1 / Mater. Res. Bull. (1979)
10.1016/0025-5408(79)90115-6 / Mater. Res. Bull. (1979)
10.1016/0165-1633(79)90040-6 / Sol. Energ. Mater. (1979)
{'key': '2024020500334058100_r5', 'first-page': '105', 'volume': '26', 'year': '1965', 'journal-title': 'Philips Tech. Rev.'} / Philips Tech. Rev. (1965)
{'key': '2024020500334058100_r6', 'first-page': '1054', 'volume': '10', 'year': '1976', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1976)
10.1063/1.327610 / J. Appl. Phys. (1980)
10.1149/1.2132972 / J. Electrochem. Soc. (1976)
{'key': '2024020500334058100_r9'}
10.1146/annurev.ms.07.080177.000445 / Ann. Rev. Mater. Sci. (1977)
10.1016/0040-6090(80)90160-1 / Thin Solid Films (1980)
{'key': '2024020500334058100_r12'}
10.1149/1.2404043 / J. Electrochem. Soc. (1972)
{'key': '2024020500334058100_r14', 'first-page': '524', 'volume': '46', 'year': '1975', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1975)
10.1063/1.323240 / J. Appl. Phys. (1976)
{'key': '2024020500334058100_r16', 'first-page': '1139', 'volume': '12', 'year': '1978', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1978)
10.1016/S0022-3697(74)80102-2 / J. Phys. Chem. Solids (1974)
10.1016/0022-3697(75)90049-9 / J. Phys. Chem. Solids (1975)
{'key': '2024020500334058100_r19'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 7:33 p.m.)
Indexed	1 month ago (July 23, 2025, 8 a.m.)
Issued	43 years, 5 months ago (March 1, 1982)
Published	43 years, 5 months ago (March 1, 1982)
Published Print	43 years, 5 months ago (March 1, 1982)

Funders 0

None

BibTeX

@article{Shanthi_1982, title={Electrical and optical properties of tin oxide films doped with F and (Sb+F)}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.330619}, DOI={10.1063/1.330619}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Shanthi, E. and Banerjee, A. and Dutta, V. and Chopra, K. L.}, year={1982}, month=mar, pages={1615–1621} }

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