Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

Results are presented from the first theoretical study of the electronic properties of strained-layer semiconductor superlattices made from lattice mismatched materials. The energy gaps and electronic states of GaAs-GaAs0.2P0.8 (100) superlattices are studied as a function of layer thicknesses using a tight binding model. The superlattice band gaps are found to depend on the layer thicknesses through quantum mechanical effects and through the strains in the layers.

Bibliography

Osbourn, G. C. (1982). Strained-layer superlattices from lattice mismatched materials. Journal of Applied Physics, 53(3), 1586–1589.

Authors 1
  1. G. C. Osbourn (first)
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 7:33 p.m.)
Indexed 4 weeks, 1 day ago (July 30, 2025, 9:56 a.m.)
Issued 43 years, 5 months ago (March 1, 1982)
Published 43 years, 5 months ago (March 1, 1982)
Published Print 43 years, 5 months ago (March 1, 1982)
Funders 0

None

@article{Osbourn_1982, title={Strained-layer superlattices from lattice mismatched materials}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.330615}, DOI={10.1063/1.330615}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Osbourn, G. C.}, year={1982}, month=mar, pages={1586–1589} }