Abstract
Results are presented from the first theoretical study of the electronic properties of strained-layer semiconductor superlattices made from lattice mismatched materials. The energy gaps and electronic states of GaAs-GaAs0.2P0.8 (100) superlattices are studied as a function of layer thicknesses using a tight binding model. The superlattice band gaps are found to depend on the layer thicknesses through quantum mechanical effects and through the strains in the layers.
References
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 7:33 p.m.) |
Indexed | 4 weeks, 1 day ago (July 30, 2025, 9:56 a.m.) |
Issued | 43 years, 5 months ago (March 1, 1982) |
Published | 43 years, 5 months ago (March 1, 1982) |
Published Print | 43 years, 5 months ago (March 1, 1982) |
@article{Osbourn_1982, title={Strained-layer superlattices from lattice mismatched materials}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.330615}, DOI={10.1063/1.330615}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Osbourn, G. C.}, year={1982}, month=mar, pages={1586–1589} }