Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

Superconducting thin films of BaPb1−xBixO3 with transition temperature above 9 K were successfully prepared by rf diode sputtering and subsequent annealing. It was found that sputtered films tended to lack Pb and Bi during deposition, so that targets with excess Pb and Bi were used in order to achieve the film stoichiometry. Sufficient oxygen partial pressure during discharge was found to be requisite for obtaining thin films with low resistivity, high Tc, and sharp superconducting transition. The films admit optical transmission to a small extent in the wavelength range from 500 to 700 nm. Based on these results, some aspects of the band structure are discussed.

Bibliography

Suzuki, M., Enomoto, Y., Murakami, T., & Inamura, T. (1982). Preparation and properties of superconducting BaPb1−xBixO3 thin films by sputtering. Journal of Applied Physics, 53(3), 1622–1630.

Authors 4
  1. Minoru Suzuki (first)
  2. Youichi Enomoto (additional)
  3. Toshiaki Murakami (additional)
  4. Takahiro Inamura (additional)
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 7:33 p.m.)
Indexed 1 year, 6 months ago (Feb. 4, 2024, 10:55 p.m.)
Issued 43 years, 5 months ago (March 1, 1982)
Published 43 years, 5 months ago (March 1, 1982)
Published Print 43 years, 5 months ago (March 1, 1982)
Funders 0

None

@article{Suzuki_1982, title={Preparation and properties of superconducting BaPb1−xBixO3 thin films by sputtering}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.330612}, DOI={10.1063/1.330612}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Suzuki, Minoru and Enomoto, Youichi and Murakami, Toshiaki and Inamura, Takahiro}, year={1982}, month=mar, pages={1622–1630} }