Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The formation of cellular structures resulting from interfacial instability has been studied in indium- and antimony-implanted silicon after pulsed ruby laser annealing. The average cell sizes at the onset of instability and in the region of well-developed instability were determined using cross-section and plan-view electron microscopy, while the Rutherford backscattering ion-channeling technique was used to obtain solute concentration profiles. These results on average cell sizes and solute concentrations were compared with the predictions of the perturbation theory, which included the dependence of distribution coefficient on the velocity of solidification.

Bibliography

Narayan, J., Naramoto, H., & White, C. W. (1982). Cell formation and interfacial instability in laser-annealed Si-In and Si-Sb alloys. Journal of Applied Physics, 53(2), 912–915.

Authors 3
  1. J. Narayan (first)
  2. H. Naramoto (additional)
  3. C. W. White (additional)
References 10 Referenced 22
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 7:23 p.m.)
Indexed 1 month, 3 weeks ago (July 4, 2025, 8:06 a.m.)
Issued 43 years, 6 months ago (Feb. 1, 1982)
Published 43 years, 6 months ago (Feb. 1, 1982)
Published Print 43 years, 6 months ago (Feb. 1, 1982)
Funders 0

None

@article{Narayan_1982, title={Cell formation and interfacial instability in laser-annealed Si-In and Si-Sb alloys}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.330559}, DOI={10.1063/1.330559}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Narayan, J. and Naramoto, H. and White, C. W.}, year={1982}, month=feb, pages={912–915} }