DOI: 10.1063/1.330534. Molecular beam epitaxial growth of lattice-mismatched In0.77Ga0.23As on InP

Molecular beam epitaxial growth of lattice-mismatched In0.77Ga0.23As on InP

10.1063/1.330534

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

It is demonstrated that lattice-mismatched InxGa1−xAs (x = 0.77) can be grown by molecular beam epitaxy on InP substrates with mobilities and photoluminescence (PL) intensities comparable to those of the lattice-matched InxGa1−xAs (x = 0.53). This was accomplished using a graded buffer layer and superlattice dislocation barrier between the substrate and the In0.77Ga0.23As layer. The lattice-mismatched layers have Hall mobilities of 7000–8000 cm2/V sec at room temperature and photoluminescence intensities at liquid nitrogen temperature of 1/2–1/3 of that from the lattice-matched InxGa1−xAs. We also found that the conventional AB etch is not a reliable guide to the electrical and optical qualities of InGaAs layers.

Bibliography

Chai, Y. G., & Chow, R. (1982). Molecular beam epitaxial growth of lattice-mismatched In0.77Ga0.23As on InP. Journal of Applied Physics, 53(2), 1229â1232.

Authors 2

Young G. Chai (first)
Robert Chow (additional)

References 14 Referenced 23

10.1063/1.1655416 / Appl. Phys. Lett. (1974)
10.1063/1.88923 / Appl. Phys. Lett. (1976)
10.1063/1.325077 / J. Appl. Phys. (1978)
10.1063/1.90081 / Appl. Phys. Lett. (1978)
{'key': '2024020500293078300_r5', 'first-page': '154', 'volume': 'EDL-1', 'year': '1980', 'journal-title': 'IEEE Trans. Electron Devices Lett.'} / IEEE Trans. Electron Devices Lett. (1980)
10.1063/1.92143 / Appl. Phys. Lett. (1981)
10.1007/BF02655291 / J. Electron. Mater. (1974)
{'key': '2024020500293078300_r8', 'first-page': '118', 'volume': '27', 'year': '1974', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1974)
10.1016/0040-6090(76)90085-7 / Thin Solid Films (1976)
10.1116/1.569409 / J. Vac. Sci. Technol. (1977)
{'key': '2024020500293078300_r11', 'first-page': '323', 'volume': '29', 'year': '1979', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1979)
10.1016/0022-4596(77)90049-4 / Solid State Technol. (1977)
10.1007/BF02657835 / J. Electron. Mater. (1975)
{'key': '2024020500293078300_r14', 'first-page': 'L17', 'volume': '19', 'year': '1979', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1979)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 7:29 p.m.)
Indexed	1 year, 2 months ago (July 5, 2024, 5:15 p.m.)
Issued	43 years, 7 months ago (Feb. 1, 1982)
Published	43 years, 7 months ago (Feb. 1, 1982)
Published Print	43 years, 7 months ago (Feb. 1, 1982)

Funders 0

None

BibTeX

@article{Chai_1982, title={Molecular beam epitaxial growth of lattice-mismatched In0.77Ga0.23As on InP}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.330534}, DOI={10.1063/1.330534}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chai, Young G. and Chow, Robert}, year={1982}, month=feb, pages={1229–1232} }

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