DOI: 10.1063/1.330521. Pd–thin-SiO2–Si diode. I. Isothermal variation of H2-induced interfacial trapping states [Penn]

Pd–thin-SiO2–Si diode. I. Isothermal variation of H2-induced interfacial trapping states

10.1063/1.330521

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The current-voltage characteristic and the small-signal frequency-dependent admittance response of Pd–thin-SiO2–Si diodes are measured. It is found that the characteristics undergo reversible changes by switching the ambient gas between hydrogen diluted in nitrogen and pure oxygen. Dispersive peaks and structures are observed in the C-V and G-V plots obtained under hydrogen which are absent under oxygen. It is concluded that hydrogen-generated interfacial trapping states are responsible for the induced electrical changes in the Pd–thin-SiO2–Si diodes.

Bibliography

Keramati, B., & Zemel, J. N. (1982). Pdâthin-SiO2âSi diode. I. Isothermal variation of H2-induced interfacial trapping states. Journal of Applied Physics, 53(2), 1091â1099.

Authors 2

Bahman Keramati (first)
Jay N. Zemel (additional)

References 47 Referenced 64

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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 7:27 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 3:15 p.m.)
Issued	43 years, 6 months ago (Feb. 1, 1982)
Published	43 years, 6 months ago (Feb. 1, 1982)
Published Print	43 years, 6 months ago (Feb. 1, 1982)

Funders 0

None

BibTeX

@article{Keramati_1982, title={Pd–thin-SiO2–Si diode. I. Isothermal variation of H2-induced interfacial trapping states}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.330521}, DOI={10.1063/1.330521}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Keramati, Bahman and Zemel, Jay N.}, year={1982}, month=feb, pages={1091–1099} }

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