DOI: 10.1063/1.330453. Thin germanium nitride films grown by thermal reaction process

Thin germanium nitride films grown by thermal reaction process

10.1063/1.330453

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Thin films have been grown on 〈111〉 germanium by thermal nitridation. The surface morphology, composition, thickness, and refractive index of the films have been investigated. Compositional analysis was performed by electron beam x-ray microanalysis which indicates that the films contain oxygen as well as nitrogen and have a nitrogen to oxygen ratio on the order of 2.5:1. Film thickness and refractive index were determined by ellipsometry. The thicknesses ranged from 60 to 150 Å, and the refractive indices ranged from 1.5 to 2.3 depending on growth parameters. A universal chart for evaluating the thickness and refractive index of dielectric films on germanium from the ellipsometric parameters ψ and Δ is also presented.

Bibliography

Hua, Q., Rosenberg, J., Ye, J., & Yang, E. S. (1982). Thin germanium nitride films grown by thermal reaction process. Journal of Applied Physics, 53(12), 8969â8973.

Authors 4

Qingheng Hua (first)
James Rosenberg (additional)
Jinguan Ye (additional)
Edward S. Yang (additional)

References 13 Referenced 19

10.1021/ja01375a078 / J. Am. Chem. Soc. (1930)
10.1143/JJAP.7.300 / Jpn. J. Appl. Phys. (1968)
{'key': '2024020501415780300_r3', 'first-page': '671', 'volume': '115', 'year': '1978', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1978)
10.1016/0040-6090(79)90065-8 / Thin Solid Films (1979)
{'key': '2024020501415780300_r5', 'first-page': '182', 'volume': 'EDL-2', 'year': '1981', 'journal-title': 'Electron. Dev. Lett.'} / Electron. Dev. Lett. (1981)
10.1063/1.92341 / Appl. Phys. Lett. (1981)
{'key': '2024020501415780300_r7', 'first-page': '498', 'volume': 'ED-29', 'year': '1982', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1982)
10.1364/JOSA.52.000970 / J. Opt. Soc. Am. (1962)
{'key': '2024020501415780300_r9'}
10.1103/PhysRev.113.1002 / Phys. Rev. (1959)
10.1149/1.2129223 / J. Electrochem. Soc. (1979)
{'key': '2024020501415780300_r12'}
10.1149/1.2131471 / J. Electrochem. Soc. (1978)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 6:21 p.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 8:42 p.m.)
Indexed	1 year, 7 months ago (Feb. 4, 2024, 9:10 p.m.)
Issued	42 years, 9 months ago (Dec. 1, 1982)
Published	42 years, 9 months ago (Dec. 1, 1982)
Published Print	42 years, 9 months ago (Dec. 1, 1982)

Funders 0

None

BibTeX

@article{Hua_1982, title={Thin germanium nitride films grown by thermal reaction process}, volume={53}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.330453}, DOI={10.1063/1.330453}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hua, Qingheng and Rosenberg, James and Ye, Jinguan and Yang, Edward S.}, year={1982}, month=dec, pages={8969–8973} }

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