DOI: 10.1063/1.3298364. Ultraflexible amorphous silicon transistors made with a resilient insulator

Ultraflexible amorphous silicon transistors made with a resilient insulator

10.1063/1.3298364

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The conventional, brittle, silicon nitride barrier layer and gate insulator in amorphous silicon thin-film transistors (a-Si:H TFTs) on 50 μm thick polyimide foil was replaced by a resilient, homogeneous, hybrid of silicon dioxide and silicone polymer. The transistor structures can be bent down to 0.5 mm radius (5% strain) in tension and down to 1 mm radius (2.5% strain) in compression. This pronounced flexibility shifts the criterion for reversible bending away from a-Si:H TFT backplanes and toward the materials for substrate and encapsulation. It qualifies a-Si:H TFTs for pull-out display screens in handheld devices.

Bibliography

Han, L., Song, K., Mandlik, P., & Wagner, S. (2010). Ultraflexible amorphous silicon transistors made with a resilient insulator. Applied Physics Letters, 96(4).

Authors 4

Lin Han (first)
Katherine Song (additional)
Prashant Mandlik (additional)
Sigurd Wagner (additional)

References 20 Referenced 52

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10.1016/S0079-6425(02)00002-6 / Prog. Mater. Sci. (2003)
10.1149/1.1373661 / J. Electrochem. Soc. (2001)
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10.1016/S1672-2515(07)60210-3 / China Particuology (2005)
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10.1063/1.95938 / Appl. Phys. Lett. (1985)
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10.1016/j.tsf.2008.06.025 / Thin Solid Films (2008)
10.1063/1.1574400 / Appl. Phys. Lett. (2003)
10.1063/1.2164412 / Appl. Phys. Lett. (2006)
10.1143/JJAP.44.2841 / Jpn. J. Appl. Phys., Part 1 (2005)
10.1016/j.tsf.2004.08.128 / Thin Solid Films (2005)
10.1063/1.3216587 / Appl. Phys. Lett. (2009)
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Dates

Type	When
Created	15 years, 6 months ago (Feb. 1, 2010, 11:35 a.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 1:43 a.m.)
Indexed	3 weeks, 6 days ago (July 30, 2025, 6:54 a.m.)
Issued	15 years, 7 months ago (Jan. 25, 2010)
Published	15 years, 7 months ago (Jan. 25, 2010)
Published Online	15 years, 6 months ago (Jan. 29, 2010)
Published Print	15 years, 7 months ago (Jan. 25, 2010)

Funders 0

None

BibTeX

@article{Han_2010, title={Ultraflexible amorphous silicon transistors made with a resilient insulator}, volume={96}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3298364}, DOI={10.1063/1.3298364}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Han, Lin and Song, Katherine and Mandlik, Prashant and Wagner, Sigurd}, year={2010}, month=jan }

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