Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

In order to determine an energetic distribution of localized states, a new method is proposed. The method is based on the analysis of the phase shift between a sinusoidally modulated excitation light and its inducing photocurrent. The theoretical relation between the phase shift and its relevant localized states is derived assuming a trap-limited band conduction of unipolar photocarriers. The energetic profile of the localized states can be calculated from a modulation frequency dependence of the phase shift. The method has been applied to CdS crystal and the validity has been confirmed. It is suggested that the method is useful for amorphous semiconductors in which the localized states are distributed quasi-continuously in the band gap.

Bibliography

Oheda, H. (1981). Phase-shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states. Journal of Applied Physics, 52(11), 6693–6700.

Authors 1
  1. Hidetoshi Oheda (first)
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 5:56 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 7:09 p.m.)
Indexed 1 year, 6 months ago (Feb. 10, 2024, 2:24 p.m.)
Issued 43 years, 9 months ago (Nov. 1, 1981)
Published 43 years, 9 months ago (Nov. 1, 1981)
Published Print 43 years, 9 months ago (Nov. 1, 1981)
Funders 0

None

@article{Oheda_1981, title={Phase-shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states}, volume={52}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.328619}, DOI={10.1063/1.328619}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Oheda, Hidetoshi}, year={1981}, month=nov, pages={6693–6700} }