DOI: 10.1063/1.328618. Properties of zinc oxide films prepared by the oxidation of diethyl zinc

Properties of zinc oxide films prepared by the oxidation of diethyl zinc

10.1063/1.328618

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Polycrystalline transparent semiconducting zinc oxide films have been deposited by the oxidation of diethyl zinc. The film growth rate is controlled by a complex multistep oxidation process which is dominated by radical reactions. The effect of substrate temperature and gas pressures have been studied. Samples deposited between 280 and 350 °C have a conductivity varying from 10−2 to 50 Ω−1 cm−1. The electrical properties of the films which are typical of polycrystalline material with small crystallites are shown to depend very closely on the film growth conditions. A study of oxygen chemisorption at grain boundaries confirms the importance of grain boundary effects in ZnO polycrystalline films.

Bibliography

Roth, A. P., & Williams, D. F. (1981). Properties of zinc oxide films prepared by the oxidation of diethyl zinc. Journal of Applied Physics, 52(11), 6685â6692.

Authors 2

A. P. Roth (first)
D. F. Williams (additional)

References 29 Referenced 233

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{'key': '2024020500092653500_r2'}
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:56 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 7:09 p.m.)
Indexed	3 weeks, 1 day ago (Aug. 12, 2025, 5:50 p.m.)
Issued	43 years, 10 months ago (Nov. 1, 1981)
Published	43 years, 10 months ago (Nov. 1, 1981)
Published Print	43 years, 10 months ago (Nov. 1, 1981)

Funders 0

None

BibTeX

@article{Roth_1981, title={Properties of zinc oxide films prepared by the oxidation of diethyl zinc}, volume={52}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.328618}, DOI={10.1063/1.328618}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Roth, A. P. and Williams, D. F.}, year={1981}, month=nov, pages={6685–6692} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        12
      ]
    ],
    "date-time": "2025-08-12T21:50:41Z",
    "timestamp": 1755035441943
  },
  "reference-count": 29,
  "publisher": "AIP Publishing",
  "issue": "11",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1981,
        11,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Polycrystalline transparent semiconducting zinc oxide films have been deposited by the oxidation of diethyl zinc. The film growth rate is controlled by a complex multistep oxidation process which is dominated by radical reactions. The effect of substrate temperature and gas pressures have been studied. Samples deposited between 280 and 350\u2009\u00b0C have a conductivity varying from 10\u22122 to 50 \u03a9\u22121\u2009cm\u22121. The electrical properties of the films which are typical of polycrystalline material with small crystallites are shown to depend very closely on the film growth conditions. A study of oxygen chemisorption at grain boundaries confirms the importance of grain boundary effects in ZnO polycrystalline films.</jats:p>",
  "DOI": "10.1063/1.328618",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        14
      ]
    ],
    "date-time": "2003-02-14T22:56:50Z",
    "timestamp": 1045263410000
  },
  "page": "6685-6692",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 233,
  "title": "Properties of zinc oxide films prepared by the oxidation of diethyl zinc",
  "prefix": "10.1063",
  "volume": "52",
  "author": [
    {
      "given": "A. P.",
      "family": "Roth",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Division of Chemistry, National Research Council of Canada, Ottawa, Canada K1A OR6"
        }
      ]
    },
    {
      "given": "D. F.",
      "family": "Williams",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Division of Chemistry, National Research Council of Canada, Ottawa, Canada K1A OR6"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020500092653500_r1",
      "doi-asserted-by": "crossref",
      "first-page": "631",
      "DOI": "10.1109/PROC.1976.10187",
      "volume": "64",
      "year": "1976",
      "journal-title": "Proc. IEEE"
    },
    {
      "key": "2024020500092653500_r2"
    },
    {
      "key": "2024020500092653500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "841",
      "DOI": "10.1002/pssb.19650080322",
      "volume": "8",
      "year": "1965",
      "journal-title": "Phys. Status Solidi"
    },
    {
      "key": "2024020500092653500_r4",
      "doi-asserted-by": "crossref",
      "first-page": "6447",
      "DOI": "10.1103/PhysRevB.22.6447",
      "volume": "22",
      "year": "1980",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020500092653500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1263",
      "DOI": "10.1088/0034-4885/43/11/001",
      "volume": "43",
      "year": "1980",
      "journal-title": "Rep. Prog. Phys."
    },
    {
      "key": "2024020500092653500_r6"
    },
    {
      "key": "2024020500092653500_r7",
      "doi-asserted-by": "crossref",
      "first-page": "171",
      "DOI": "10.1016/0022-0248(79)90239-2",
      "volume": "47",
      "year": "1979",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020500092653500_r8",
      "first-page": "1636",
      "volume": "7",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020500092653500_r9",
      "doi-asserted-by": "crossref",
      "first-page": "23",
      "DOI": "10.1016/0040-6090(80)90179-0",
      "volume": "71",
      "year": "1980",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020500092653500_r10",
      "doi-asserted-by": "crossref",
      "first-page": "439",
      "DOI": "10.1063/1.1653058",
      "volume": "16",
      "year": "1970",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020500092653500_r11",
      "doi-asserted-by": "crossref",
      "first-page": "395",
      "DOI": "10.1007/BF02659165",
      "volume": "1",
      "year": "1972",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020500092653500_r12",
      "doi-asserted-by": "crossref",
      "first-page": "1843",
      "DOI": "10.1149/1.2130012",
      "volume": "127",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020500092653500_r13",
      "doi-asserted-by": "crossref",
      "first-page": "449",
      "DOI": "10.1063/1.91960",
      "volume": "37",
      "year": "1980",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020500092653500_r14",
      "doi-asserted-by": "crossref",
      "first-page": "558",
      "DOI": "10.1149/1.2127457",
      "volume": "128",
      "year": "1981",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020500092653500_r15"
    },
    {
      "key": "2024020500092653500_r16",
      "doi-asserted-by": "crossref",
      "first-page": "125",
      "DOI": "10.1016/0022-0248(74)90129-8",
      "volume": "22",
      "year": "1974",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020500092653500_r17",
      "volume": "4130",
      "year": "1960",
      "journal-title": "J. Chem. Soc."
    },
    {
      "key": "2024020500092653500_r18",
      "volume": "688",
      "year": "1960",
      "journal-title": "J. Chem. Soc."
    },
    {
      "key": "2024020500092653500_r19",
      "volume": "476",
      "year": "1969",
      "journal-title": "J. Chem. Soc."
    },
    {
      "key": "2024020500092653500_r20",
      "doi-asserted-by": "crossref",
      "first-page": "941",
      "DOI": "10.1149/1.2132972",
      "volume": "123",
      "year": "1976",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020500092653500_r21",
      "doi-asserted-by": "crossref",
      "first-page": "990",
      "DOI": "10.1063/1.1662384",
      "volume": "44",
      "year": "1973",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020500092653500_r22"
    },
    {
      "key": "2024020500092653500_r23",
      "doi-asserted-by": "crossref",
      "first-page": "1082",
      "DOI": "10.1116/1.569340",
      "volume": "14",
      "year": "1977",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "2024020500092653500_r24",
      "first-page": "514",
      "volume": "4",
      "year": "1974",
      "journal-title": "CRC Critical Review in S. S. Sciences"
    },
    {
      "key": "2024020500092653500_r25",
      "doi-asserted-by": "crossref",
      "first-page": "695",
      "DOI": "10.1016/0038-1101(66)90097-9",
      "volume": "9",
      "year": "1966",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020500092653500_r26",
      "doi-asserted-by": "crossref",
      "first-page": "89",
      "DOI": "10.1016/0038-1101(69)90117-8",
      "volume": "12",
      "year": "1969",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020500092653500_r27",
      "doi-asserted-by": "crossref",
      "first-page": "3",
      "DOI": "10.1002/pssb.19650120102",
      "volume": "12",
      "year": "1965",
      "journal-title": "Phys. Status Solidi"
    },
    {
      "key": "2024020500092653500_r28",
      "doi-asserted-by": "crossref",
      "first-page": "4069",
      "DOI": "10.1063/1.325367",
      "volume": "49",
      "year": "1978",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020500092653500_r29"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/52/11/6685/18394088/6685_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/52/11/6685/18394088/6685_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T00:09:37Z",
    "timestamp": 1707091777000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/52/11/6685/10197/Properties-of-zinc-oxide-films-prepared-by-the"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1981,
        11,
        1
      ]
    ]
  },
  "references-count": 29,
  "journal-issue": {
    "issue": "11",
    "published-print": {
      "date-parts": [
        [
          1981,
          11,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.328618",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1981,
        11
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1981,
        11,
        1
      ]
    ]
  }
}