DOI: 10.1063/1.328324. Transport properties of Sn-doped Al<i>x</i>Ga1−<i>x</i>As grown by molecular beam epitaxy

Transport properties of Sn-doped AlxGa1−xAs grown by molecular beam epitaxy

10.1063/1.328324

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Transport properties of Alx Ga1−x As layers having AlAs mole fractions between 0.17 and 0.375 and grown by molecular beam epitaxy were investigated. The Al cell temperature was kept at 1075 °C while the Ga cell temperature was changed between 910 and 950 °C to obtain the aforementioned AlAs mole fractions. The donor levels of Sn in Alx Ga1−x As obtained from the temperature dependence of the net donor concentration are below 3, 30, and 40 meV for x=0.17, x=0.29, and x=0.375, respectively. Al0.22 Ga0.78 As layers having a net electron concentration of about 1.7×1018 cm−3 and grown at 630 °C exhibited a mobility of 868 and 1095 cm2/V sec at 300 and 78 °K, respectively. The mobility was found to be strongly dependent on the substrate temperature during the growth. The lower substrate temperatures resulted in lower electron mobility.

Bibliography

MorkoÃ§, H., Cho, A. Y., & Radice, C. (1980). Transport properties of Sn-doped AlxGa1âxAs grown by molecular beam epitaxy. Journal of Applied Physics, 51(9), 4882â4884.

Authors 3

Hadis Morkoç (first)
A. Y. Cho (additional)
C. Radice (additional)

References 17 Referenced 34

{'key': '2024020423043548000_r1'}
{'key': '2024020423043548000_r2'}
10.1063/1.326343 / J. Appl. Phys. (1979)
{'key': '2024020423043548000_r4'}
10.1063/1.325732 / J. Appl. Phys. (1979)
{'key': '2024020423043548000_r6', 'first-page': '935', 'volume': 'MTT-26', 'year': '1978', 'journal-title': 'IEEE Trans. Microwave Theory Tech.'} / IEEE Trans. Microwave Theory Tech. (1978)
10.1063/1.326017 / J. Appl. Phys. (1979)
10.1063/1.90839 / Appl. Phys. Lett. (1979)
10.1049/el:19800053 / Electronics Lett. (1980)
{'key': '2024020423043548000_r10'}
10.1063/1.90451 / Appl. Phys. Lett. (1978)
10.1016/0040-6090(76)90355-2 / Thin Solid Films (1976)
10.1063/1.1662631 / J. Appl. Phys. (1973)
10.1007/BF02657839 / J. Electron. Mater. (1975)
10.1063/1.322974 / J. Appl. Phys. (1976)
10.1063/1.1660490 / J. Appl. Phys. (1971)
10.1063/1.326445 / J. Appl. Phys. (1979)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 6:04 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:25 a.m.)
Issued	45 years ago (Sept. 1, 1980)
Published	45 years ago (Sept. 1, 1980)
Published Print	45 years ago (Sept. 1, 1980)

Funders 0

None

BibTeX

@article{Morko__1980, title={Transport properties of Sn-doped AlxGa1−xAs grown by molecular beam epitaxy}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.328324}, DOI={10.1063/1.328324}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Morkoç, Hadis and Cho, A. Y. and Radice, C.}, year={1980}, month=sep, pages={4882–4884} }

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