DOI: 10.1063/1.328248. Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy

Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy

10.1063/1.328248

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Intentional perturbations applied to the growth parameters of Sn-doped GaAs layers grown by molecular beam epitaxy have been performed in order to investigate the tin incorporation mechanism. The start, the interruption, and the end of growth as well as a variation of fluxes or substrate temperature have been studied, using either the Auger electron spectroscopy (AES) measurement of tin accumulation on the surface, or C-V derived free-carrier concentration profile versus any of these growth parameters. The theoretical model proposed by Wood and Joyce, based on a time-delayed incorporation mechanism, has been found to fit the observed results, especially for As-rich surface, provided that an incorporation mechanism of second order is assumed. For Ga-rich conditions (Ts≳580 °C), a new result has been recognized, i.e., a significant reduction of carrier concentration as Ts is increased. The assumption of a partially acceptor nature of tin incident atoms under these growth conditions does not seem to fully explain this result. On the other hand, this may be better understood assuming a certain amount of tin atoms being re-evaporated in the high substrate temperature range. This behavior induces a temporarily weaker accumulation at the surface, and hence a relatively smaller incorporation rate.

Bibliography

Alexandre, F., Raisin, C., Abdalla, M. I., Brenac, A., & Masson, J. M. (1980). Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 51(8), 4296â4304.

Authors 5

F. Alexandre (first)
C. Raisin (additional)
M. I. Abdalla (additional)
A. Brenac (additional)
J. M. Masson (additional)

References 21 Referenced 44

10.1016/0079-6786(75)90005-9 / Prog. Solid State Chem. (1975)
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10.1063/1.321777 / J. Appl. Phys. (1975)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 6 p.m.)
Indexed	1 year, 2 months ago (June 18, 2024, 7:19 a.m.)
Issued	45 years ago (Aug. 1, 1980)
Published	45 years ago (Aug. 1, 1980)
Published Print	45 years ago (Aug. 1, 1980)

Funders 0

None

BibTeX

@article{Alexandre_1980, title={Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.328248}, DOI={10.1063/1.328248}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Alexandre, F. and Raisin, C. and Abdalla, M. I. and Brenac, A. and Masson, J. M.}, year={1980}, month=aug, pages={4296–4304} }

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