Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The influence of electron-electron scattering processes on high-field transport properties of electrons in GaAs, and the usefulness of a drifted Maxwellian approximation to the distribution function in analysis of devices in which these effects are important, have been studied. Monte Carlo simulations of transport both with and without electron-electron scattering included are compared with drifted Maxwellian distribution functions over a range of doping and electric field values typical of submicron-scale devices. Electron-electron scattering is found to have a significant effect on the shape of the distribution function derived by MC simulation, but little effect on the average electron velocity. The degree of approximation involved in device analyses when the drifted Maxwellian is used instead of the correct distribution function is discussed.

Bibliography

Inoue, M., & Frey, J. (1980). Electron-electron interaction and screening effects in hot electron transport in GaAs. Journal of Applied Physics, 51(8), 4234–4239.

Authors 2
  1. Masataka Inoue (first)
  2. Jeffrey Frey (additional)
References 11 Referenced 14
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 5:56 p.m.)
Indexed 1 year, 6 months ago (Feb. 5, 2024, 10:05 a.m.)
Issued 45 years ago (Aug. 1, 1980)
Published 45 years ago (Aug. 1, 1980)
Published Print 45 years ago (Aug. 1, 1980)
Funders 0

None

@article{Inoue_1980, title={Electron-electron interaction and screening effects in hot electron transport in GaAs}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.328237}, DOI={10.1063/1.328237}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Inoue, Masataka and Frey, Jeffrey}, year={1980}, month=aug, pages={4234–4239} }