Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

Pressures assigned to the semiconductor-metal transitions in ZnTe, ZnS, GaAs, and GaP have been determined by detecting the electrical resistance change of the semiconductors while the lattice parameter of standard material NaCl was simultaneously measured with x-ray diffraction techniques. A pressure vessel of the split-octahedron type and various pressure-transmitting media have been employed. Pressures were estimated according to the equation of state for NaCl proposed by Decker. The transition pressures, 1296 kbars for ZnTe, 1557 kbars for ZnS, 1888 kbars for GaAs, and 25310 kbars for GaP, constitute fixed points for pressure calibration above 100 kbars at room temperature.

Bibliography

Onodera, A., & Ohtani, A. (1980). Fixed points for pressure calibration above 100 kbars related to semiconductor-metal transitions. Journal of Applied Physics, 51(5), 2581–2585.

Authors 2
  1. Akifumi Onodera (first)
  2. Akihito Ohtani (additional)
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 5:47 p.m.)
Indexed 3 months, 4 weeks ago (April 29, 2025, 9:29 a.m.)
Issued 45 years, 3 months ago (May 1, 1980)
Published 45 years, 3 months ago (May 1, 1980)
Published Print 45 years, 3 months ago (May 1, 1980)
Funders 0

None

@article{Onodera_1980, title={Fixed points for pressure calibration above 100 kbars related to semiconductor-metal transitions}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.327984}, DOI={10.1063/1.327984}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Onodera, Akifumi and Ohtani, Akihito}, year={1980}, month=may, pages={2581–2585} }