DOI: 10.1063/1.327805. Infrared absorption bands induced by Si-related defects in GaAs: Absorption cross sections

Infrared absorption bands induced by Si-related defects in GaAs: Absorption cross sections

10.1063/1.327805

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Silicon is an amphoteric impurity in GaAs and is present in different defect configurations. This work reports measurements of the infrared absorption cross sections for some of the localized vibrational mode bands related to the Si defects. Heavily doped melt-grown samples are used to measure the free-carrier density ne and the integrated absorption of all bands attributed to electrically active defects. The resulting data are analyzed by using a least-squares-fitting procedure employing two different models. A set of absorption cross sections is given for each model. These results differ from others reported recently. Using the two sets of cross sections to interpret the absorption spectra of p-type liquid-phase epitaxial samples seems to reaffirm a previously reported interpretation in which an additional Si-related acceptor defect of unknown nature is present.

Bibliography

Chen, R. T., Rana, V., & Spitzer, W. G. (1980). Infrared absorption bands induced by Si-related defects in GaAs: Absorption cross sections. Journal of Applied Physics, 51(3), 1532â1538.

Authors 3

R. T. Chen (first)
V. Rana (additional)
W. G. Spitzer (additional)

References 25 Referenced 32

10.1063/1.1655899 / J. Appl. Phys. (1968)
10.1063/1.1663362 / J. Appl. Phys. (1974)
{'key': '2024020422434299600_r3'}
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10.1063/1.1662287 / J. Appl. Phys. (1973)
10.1063/1.1663074 / J. Appl. Phys. (1974)
10.1149/1.2401715 / J. Electrochem. Soc. (1974)
10.1063/1.1663572 / J. Appl. Phys. (1974)
10.1063/1.1661465 / J. Appl. Phys. (1972)
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{'key': '2024020422434299600_r15'}
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{'key': '2024020422434299600_r18'}
{'key': '2024020422434299600_r19', 'first-page': '2101', 'volume': '32', 'year': '1961', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1961)
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{'key': '2024020422434299600_r20a', 'first-page': '674', 'volume': '93', 'year': '1953', 'journal-title': 'Phys. Rev.'} / Phys. Rev. (1953)
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{'key': '2024020422434299600_r22'}
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10.1063/1.1659807 / J. Appl. Phys. (1971)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 5:43 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:22 a.m.)
Issued	45 years, 5 months ago (March 1, 1980)
Published	45 years, 5 months ago (March 1, 1980)
Published Print	45 years, 5 months ago (March 1, 1980)

Funders 0

None

BibTeX

@article{Chen_1980, title={Infrared absorption bands induced by Si-related defects in GaAs: Absorption cross sections}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.327805}, DOI={10.1063/1.327805}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen, R. T. and Rana, V. and Spitzer, W. G.}, year={1980}, month=mar, pages={1532–1538} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T14:22:12Z",
    "timestamp": 1707142932449
  },
  "reference-count": 25,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1980,
        3,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Silicon is an amphoteric impurity in GaAs and is present in different defect configurations. This work reports measurements of the infrared absorption cross sections for some of the localized vibrational mode bands related to the Si defects. Heavily doped melt-grown samples are used to measure the free-carrier density ne and the integrated absorption of all bands attributed to electrically active defects. The resulting data are analyzed by using a least-squares-fitting procedure employing two different models. A set of absorption cross sections is given for each model. These results differ from others reported recently. Using the two sets of cross sections to interpret the absorption spectra of p-type liquid-phase epitaxial samples seems to reaffirm a previously reported interpretation in which an additional Si-related acceptor defect of unknown nature is present.</jats:p>",
  "DOI": "10.1063/1.327805",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        14
      ]
    ],
    "date-time": "2003-02-14T22:37:18Z",
    "timestamp": 1045262238000
  },
  "page": "1532-1538",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 32,
  "title": "Infrared absorption bands induced by Si-related defects in GaAs: Absorption cross sections",
  "prefix": "10.1063",
  "volume": "51",
  "author": [
    {
      "given": "R. T.",
      "family": "Chen",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Departments of Physics and Materials Science, University of Southern California, Los Angeles, California 90007"
        }
      ]
    },
    {
      "given": "V.",
      "family": "Rana",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Departments of Physics and Materials Science, University of Southern California, Los Angeles, California 90007"
        }
      ]
    },
    {
      "given": "W. G.",
      "family": "Spitzer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Departments of Physics and Materials Science, University of Southern California, Los Angeles, California 90007"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020422434299600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "4999",
      "DOI": "10.1063/1.1655899",
      "volume": "39",
      "year": "1968",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1009",
      "DOI": "10.1063/1.1663362",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r3"
    },
    {
      "key": "2024020422434299600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "4503",
      "DOI": "10.1088/0022-3719/9/24/019",
      "volume": "9",
      "year": "1976",
      "journal-title": "J. Phys. C"
    },
    {
      "key": "2024020422434299600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1689",
      "DOI": "10.1080/14786437708232991",
      "volume": "35",
      "year": "1977",
      "journal-title": "Philos. Mag."
    },
    {
      "key": "2024020422434299600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "912",
      "DOI": "10.1063/1.1662287",
      "volume": "44",
      "year": "1973",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "4477",
      "DOI": "10.1063/1.1663074",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1482",
      "DOI": "10.1149/1.2401715",
      "volume": "121",
      "year": "1974",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020422434299600_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2254",
      "DOI": "10.1063/1.1663572",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r10",
      "doi-asserted-by": "crossref",
      "first-page": "2146",
      "DOI": "10.1063/1.1661465",
      "volume": "43",
      "year": "1972",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r11"
    },
    {
      "key": "2024020422434299600_r12",
      "doi-asserted-by": "crossref",
      "first-page": "4200",
      "DOI": "10.1063/1.1657165",
      "volume": "40",
      "year": "1969",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r13",
      "doi-asserted-by": "crossref",
      "first-page": "5022",
      "DOI": "10.1063/1.322460",
      "volume": "47",
      "year": "1976",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r14",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1016/S0022-3697(71)80003-3",
      "volume": "32",
      "year": "1971",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020422434299600_r15"
    },
    {
      "key": "2024020422434299600_r16",
      "doi-asserted-by": "crossref",
      "first-page": "5",
      "DOI": "10.1063/1.1651837",
      "volume": "12",
      "year": "1968",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020422434299600_r17",
      "doi-asserted-by": "crossref",
      "first-page": "657",
      "DOI": "10.1002/pssa.2210260230",
      "volume": "26",
      "year": "1974",
      "journal-title": "Phys. Status Solidi"
    },
    {
      "key": "2024020422434299600_r18"
    },
    {
      "key": "2024020422434299600_r19",
      "first-page": "2101",
      "volume": "32",
      "year": "1961",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r20",
      "doi-asserted-by": "crossref",
      "first-page": "A785",
      "DOI": "10.1103/PhysRev.135.A785",
      "volume": "135",
      "year": "1964",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020422434299600_r20a",
      "first-page": "674",
      "volume": "93",
      "year": "1953",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020422434299600_r21"
    },
    {
      "key": "2024020422434299600_r22"
    },
    {
      "key": "2024020422434299600_r23",
      "doi-asserted-by": "crossref",
      "first-page": "2006",
      "DOI": "10.1063/1.1656480",
      "volume": "39",
      "year": "1968",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020422434299600_r24",
      "doi-asserted-by": "crossref",
      "first-page": "4512",
      "DOI": "10.1063/1.1659807",
      "volume": "42",
      "year": "1971",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/51/3/1532/18388097/1532_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/51/3/1532/18388097/1532_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T22:43:54Z",
    "timestamp": 1707086634000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/51/3/1532/10602/Infrared-absorption-bands-induced-by-Si-related"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1980,
        3,
        1
      ]
    ]
  },
  "references-count": 25,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          1980,
          3,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.327805",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1980,
        3
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1980,
        3,
        1
      ]
    ]
  }
}