DOI: 10.1063/1.327714. Static compression of silicon in the [100] and in the [111] directions

Static compression of silicon in the [100] and in the [111] directions

10.1063/1.327714

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

High pressures were generated using a diamond indentor technique. The phase transition in silicon loaded in the [100] direction and silicon loaded in the [111] direction under high pressure was studied. From the behavior of electrical resistance of silicon loaded in the [100] direction, it was found that it becomes metallic at about 12.0 GPa in agreement with the previously reported results on silicon using different techniques. However, silicon loaded in the [111] direction becomes metallic at a lower pressure. The silicon transition is highly sensitive to the type of stress applied.

Bibliography

Gupta, M. C., & Ruoff, A. L. (1980). Static compression of silicon in the [100] and in the [111] directions. Journal of Applied Physics, 51(2), 1072â1075.

Authors 2

Mool C. Gupta (first)
Arthur L. Ruoff (additional)

References 23 Referenced 133

10.1016/0022-3697(62)90085-9 / J. Phys. Chem. Solids (1962)
10.1126/science.139.3552.338.a / Science (1963)
10.1007/BF01328889 / Z. Phys. (1966)
10.1126/science.139.3556.762 / Science (1963)
10.1103/PhysRevB.12.1172 / Phys. Rev. B (1975)
10.1016/0038-1098(75)90245-8 / Solid State Commun. (1975)
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{'key': '2024020422340753300_r8', 'first-page': '2514', 'volume': '9', 'year': '1968', 'journal-title': 'Sov. Phys. Solid State'} / Sov. Phys. Solid State (1968)
10.1063/1.1660465 / J. Appl. Phys. (1971)
10.1103/RevModPhys.49.523 / Rev. Mod. Phys. (1977)
{'key': '2024020422340753300_r11', 'first-page': 'XX', 'volume': 'XX', 'year': '1964', 'journal-title': 'Am. Soc. Mech. Eng.'} / Am. Soc. Mech. Eng. (1964)
10.1126/science.198.4321.1037 / Science (1977)
{'key': '2024020422340753300_r13'}
{'key': '2024020422340753300_r14', 'first-page': '499', 'volume': '6', 'year': '1974', 'journal-title': 'High Temp. High Pressure'} / High Temp. High Pressure (1974)
{'key': '2024020422340753300_r15'}
{'key': '2024020422340753300_r16'}
{'key': '2024020422340753300_r17'}
10.1063/1.324552 / J. Appl. Phys. (1978)
10.1063/1.325995 / J. Appl. Phys. (1979)
10.1063/1.325996 / J. Appl. Phys. (1979)
10.1063/1.1135650 / Rev. Sci. Instrum. (1979)
10.1063/1.326237 / J. Appl. Phys. (1979)
10.1103/PhysRevB.7.1479 / Phys. Rev. B (1973)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 5:34 p.m.)
Indexed	2 months, 3 weeks ago (June 5, 2025, 6:48 a.m.)
Issued	45 years, 7 months ago (Feb. 1, 1980)
Published	45 years, 7 months ago (Feb. 1, 1980)
Published Print	45 years, 7 months ago (Feb. 1, 1980)

Funders 0

None

BibTeX

@article{Gupta_1980, title={Static compression of silicon in the [100] and in the [111] directions}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.327714}, DOI={10.1063/1.327714}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Gupta, Mool C. and Ruoff, Arthur L.}, year={1980}, month=feb, pages={1072–1075} }

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