Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The charge carrier mobility in the transport channel of an organic transistor is estimated within the framework of a trap-and-release model. The model accounts for the observed dependence of the mobility on the dielectric constant ε of the gate insulator. This dependence is attributed to both the effective mass of the carrier and the energetic depth of transport traps due to interface defects being functions of ε. These results are used to describe the critical role of the interface between the organic semiconductor and the dielectric material in governing charge transport in organic transistors.

Bibliography

Konezny, S. J., Bussac, M. N., & Zuppiroli, L. (2009). Trap-limited transport in rubrene transistors. Applied Physics Letters, 95(26).

Authors 3
  1. S. J. Konezny (first)
  2. M. N. Bussac (additional)
  3. L. Zuppiroli (additional)
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Dates
Type When
Created 15 years, 7 months ago (Dec. 31, 2009, 7:11 p.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 11:49 a.m.)
Indexed 1 month ago (July 30, 2025, 6:54 a.m.)
Issued 15 years, 8 months ago (Dec. 28, 2009)
Published 15 years, 8 months ago (Dec. 28, 2009)
Published Online 15 years, 8 months ago (Dec. 31, 2009)
Published Print 15 years, 8 months ago (Dec. 28, 2009)
Funders 0

None

@article{Konezny_2009, title={Trap-limited transport in rubrene transistors}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3276693}, DOI={10.1063/1.3276693}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Konezny, S. J. and Bussac, M. N. and Zuppiroli, L.}, year={2009}, month=dec }