Abstract
The charge carrier mobility in the transport channel of an organic transistor is estimated within the framework of a trap-and-release model. The model accounts for the observed dependence of the mobility on the dielectric constant ε of the gate insulator. This dependence is attributed to both the effective mass of the carrier and the energetic depth of transport traps due to interface defects being functions of ε. These results are used to describe the critical role of the interface between the organic semiconductor and the dielectric material in governing charge transport in organic transistors.
References
21
Referenced
12
10.1103/PhysRevLett.93.086602
/ Phys. Rev. Lett. (2004)10.1038/nmat1774
/ Nature Mater. (2006)10.1103/PhysRevB.78.035334
/ Phys. Rev. B (2008)10.1063/1.2170421
/ J. Appl. Phys. (2006)10.1063/1.2214363
/ J. Appl. Phys. (2006)10.1103/PhysRevB.68.235312
/ Phys. Rev. B (2003)10.1103/RevModPhys.78.973
/ Rev. Mod. Phys. (2006)10.1038/nmat1791
/ Nature Mater. (2006)10.1103/PhysRevB.75.024109
/ Phys. Rev. B (2007){'key': '2023070215492177300_c10'}
10.1016/S1079-4050(06)34007-0
/ Physico-Chemical Phenomena in Thin Films and at Solid Surfaces by Leonid (2007)10.1063/1.1673510
/ J. Chem. Phys. (1970)10.1021/j150645a027
/ J. Phys. Chem. (1984)10.1103/PhysRevB.75.245416
/ Phys. Rev. B (2007){'volume-title': 'Organic Molecular Crystals: Interacton Localization, and Transport Phenomena', 'year': '1994', 'key': '2023070215492177300_c15'}
/ Organic Molecular Crystals: Interacton Localization, and Transport Phenomena (1994)10.1002/adma.200401866
/ Adv. Mater. (2005){'key': '2023070215492177300_c17', 'first-page': '1609', 'volume': '24', 'year': '1963', 'journal-title': 'J. Phys. Chem.'}
/ J. Phys. Chem. (1963)10.1002/(SICI)1099-0488(19990215)37:4<349::AID-POLB8>3.0.CO;2-M
/ J. Polym. Sci., Part B: Polym. Phys. (1999)10.1002/pssa.2210270219
/ Phys. Status Solidi A (1975)10.1103/PhysRevB.75.235106
/ Phys. Rev. B (2007)10.1209/epl/i2003-10218-8
/ Europhys. Lett. (2004)
Dates
Type | When |
---|---|
Created | 15 years, 7 months ago (Dec. 31, 2009, 7:11 p.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 11:49 a.m.) |
Indexed | 1 month ago (July 30, 2025, 6:54 a.m.) |
Issued | 15 years, 8 months ago (Dec. 28, 2009) |
Published | 15 years, 8 months ago (Dec. 28, 2009) |
Published Online | 15 years, 8 months ago (Dec. 31, 2009) |
Published Print | 15 years, 8 months ago (Dec. 28, 2009) |
@article{Konezny_2009, title={Trap-limited transport in rubrene transistors}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3276693}, DOI={10.1063/1.3276693}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Konezny, S. J. and Bussac, M. N. and Zuppiroli, L.}, year={2009}, month=dec }