DOI: 10.1063/1.327612. Discharge of trapped electrons from MOS structures

Discharge of trapped electrons from MOS structures

10.1063/1.327612

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

It is pointed out that the electron trapping characteristics (ΔVFB-Ninj curve) depend on the pulse frequency and the pulse width of the gate voltage used in avalanche hot electron injection from the Si substrate into the SiO2 film, while the generation of the interface states depends very little on those factors. It is shown that those correlations are mainly due to the discharge of trapped electrons during the zero-bias state between pulses. The experimental results of the discharge of trapped electrons are also described and are explained by means of a modified discharge theory of MNOS structures.

Bibliography

Yamabe, K., & Miura, Y. (1980). Discharge of trapped electrons from MOS structures. Journal of Applied Physics, 51(12), 6258â6264.

Authors 2

K. Yamabe (first)
Y. Miura (additional)

References 16 Referenced 36

10.1063/1.321728 / J. Appl. Phys. (1975)
{'key': '2024020423154417200_r2', 'first-page': '520', 'volume': 'ED-26', 'year': '1979', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1979)
10.1063/1.325368 / J. appl. Phys. (1978)
10.1063/1.325241 / J. Appl. Phys. (1978)
{'key': '2024020423154417200_r5', 'first-page': '346', 'volume': 'ED-26', 'year': '1979', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1979)
10.1063/1.1659364 / J. Appl. Phys. (1970)
10.1063/1.1659996 / J. Appl. Phys. (1971)
10.1149/1.2129615 / J. Electrochem. Soc. (1980)
10.1016/0038-1101(73)90178-0 / Solid State Electron. (1973)
{'key': '2024020423154417200_r10', 'first-page': '826', 'volume': 'ED-19', 'year': '1972', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1972)
10.1049/el:19700447 / Electron. Lett. (1970)
{'key': '2024020423154417200_r12'}
10.1063/1.1661067 / J. Appl. Phys. (1972)
{'key': '2024020423154417200_r14'}
10.1103/PhysRevLett.35.449 / Phys. Rev. Lett. (1975)
10.1063/1.1657043 / J. Appl. Phys. (1969)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 6:15 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 8:48 a.m.)
Issued	44 years, 8 months ago (Dec. 1, 1980)
Published	44 years, 8 months ago (Dec. 1, 1980)
Published Print	44 years, 8 months ago (Dec. 1, 1980)

Funders 0

None

BibTeX

@article{Yamabe_1980, title={Discharge of trapped electrons from MOS structures}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.327612}, DOI={10.1063/1.327612}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yamabe, K. and Miura, Y.}, year={1980}, month=dec, pages={6258–6264} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T13:48:35Z",
    "timestamp": 1707140915770
  },
  "reference-count": 16,
  "publisher": "AIP Publishing",
  "issue": "12",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1980,
        12,
        1
      ]
    ]
  },
  "abstract": "<jats:p>It is pointed out that the electron trapping characteristics (\u0394VFB-Ninj curve) depend on the pulse frequency and the pulse width of the gate voltage used in avalanche hot electron injection from the Si substrate into the SiO2 film, while the generation of the interface states depends very little on those factors. It is shown that those correlations are mainly due to the discharge of trapped electrons during the zero-bias state between pulses. The experimental results of the discharge of trapped electrons are also described and are explained by means of a modified discharge theory of MNOS structures.</jats:p>",
  "DOI": "10.1063/1.327612",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        14
      ]
    ],
    "date-time": "2003-02-14T22:37:18Z",
    "timestamp": 1045262238000
  },
  "page": "6258-6264",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 36,
  "title": "Discharge of trapped electrons from MOS structures",
  "prefix": "10.1063",
  "volume": "51",
  "author": [
    {
      "given": "K.",
      "family": "Yamabe",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Cooperative Laboratories VLSI Technology, Research Association, Takatsuku, Kawasaki-shi, 213, Japan"
        }
      ]
    },
    {
      "given": "Y.",
      "family": "Miura",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Cooperative Laboratories VLSI Technology, Research Association, Takatsuku, Kawasaki-shi, 213, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020423154417200_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1216",
      "DOI": "10.1063/1.321728",
      "volume": "46",
      "year": "1975",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020423154417200_r2",
      "first-page": "520",
      "volume": "ED-26",
      "year": "1979",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020423154417200_r3",
      "doi-asserted-by": "crossref",
      "first-page": "4077",
      "DOI": "10.1063/1.325368",
      "volume": "49",
      "year": "1978",
      "journal-title": "J. appl. Phys."
    },
    {
      "key": "2024020423154417200_r4",
      "doi-asserted-by": "crossref",
      "first-page": "3386",
      "DOI": "10.1063/1.325241",
      "volume": "49",
      "year": "1978",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020423154417200_r5",
      "first-page": "346",
      "volume": "ED-26",
      "year": "1979",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020423154417200_r6",
      "doi-asserted-by": "crossref",
      "first-page": "3052",
      "DOI": "10.1063/1.1659364",
      "volume": "41",
      "year": "1970",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020423154417200_r7",
      "doi-asserted-by": "crossref",
      "first-page": "5654",
      "DOI": "10.1063/1.1659996",
      "volume": "42",
      "year": "1971",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020423154417200_r8",
      "doi-asserted-by": "crossref",
      "first-page": "191",
      "DOI": "10.1149/1.2129615",
      "volume": "127",
      "year": "1980",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020423154417200_r9",
      "doi-asserted-by": "crossref",
      "first-page": "811",
      "DOI": "10.1016/0038-1101(73)90178-0",
      "volume": "16",
      "year": "1973",
      "journal-title": "Solid State Electron."
    },
    {
      "key": "2024020423154417200_r10",
      "first-page": "826",
      "volume": "ED-19",
      "year": "1972",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020423154417200_r11",
      "doi-asserted-by": "crossref",
      "first-page": "645",
      "DOI": "10.1049/el:19700447",
      "volume": "6",
      "year": "1970",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2024020423154417200_r12"
    },
    {
      "key": "2024020423154417200_r13",
      "doi-asserted-by": "crossref",
      "first-page": "5045",
      "DOI": "10.1063/1.1661067",
      "volume": "43",
      "year": "1972",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020423154417200_r14"
    },
    {
      "key": "2024020423154417200_r15",
      "doi-asserted-by": "crossref",
      "first-page": "449",
      "DOI": "10.1103/PhysRevLett.35.449",
      "volume": "35",
      "year": "1975",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020423154417200_r16",
      "doi-asserted-by": "crossref",
      "first-page": "278",
      "DOI": "10.1063/1.1657043",
      "volume": "40",
      "year": "1969",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/51/12/6258/18390353/6258_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/51/12/6258/18390353/6258_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T23:15:52Z",
    "timestamp": 1707088552000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/51/12/6258/169645/Discharge-of-trapped-electrons-from-MOS-structures"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1980,
        12,
        1
      ]
    ]
  },
  "references-count": 16,
  "journal-issue": {
    "issue": "12",
    "published-print": {
      "date-parts": [
        [
          1980,
          12,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.327612",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1980,
        12
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1980,
        12,
        1
      ]
    ]
  }
}