DOI: 10.1063/1.327471. Defects in crystalline SiO2:Optical absorption of the aluminum-associated hole center

Defects in crystalline SiO2:Optical absorption of the aluminum-associated hole center

10.1063/1.327471

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Radiation-induced optical absorption in crystalline SiO2 has been investigated in a number of synthetic quartz crystals. The dominant visible absorption band peaks at 2.5 eV and correlates directly with the paramagnetic resonance signal of the (Ale+)0 center. Similarities in behavior with the V− center in MgO suggest that a small polaron theory is applicable.

Bibliography

Koumvakalis, N. (1980). Defects in crystalline SiO2:Optical absorption of the aluminum-associated hole center. Journal of Applied Physics, 51(10), 5528â5532.

Authors 1

Nicholas Koumvakalis (first)

References 29 Referenced 56

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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 6:06 p.m.)
Indexed	6 days, 17 hours ago (Aug. 30, 2025, 12:24 p.m.)
Issued	44 years, 11 months ago (Oct. 1, 1980)
Published	44 years, 11 months ago (Oct. 1, 1980)
Published Print	44 years, 11 months ago (Oct. 1, 1980)

Funders 0

None

BibTeX

@article{Koumvakalis_1980, title={Defects in crystalline SiO2:Optical absorption of the aluminum-associated hole center}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.327471}, DOI={10.1063/1.327471}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Koumvakalis, Nicholas}, year={1980}, month=oct, pages={5528–5532} }

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