Abstract
Based on electronic structure and atomic size considerations, nitrogen has been regarded as the most suitable impurity for p-type doping in ZnO. However, numerous experimental efforts by many different groups have not resulted in stable and reproducible p-type material, casting doubt on the efficacy of nitrogen as a shallow acceptor. Based on advanced first-principles calculations we find that nitrogen is actually a deep acceptor, with an exceedingly high ionization energy of 1.3 eV, and hence cannot lead to hole conductivity in ZnO. In light of this result, we reexamine prior experiments on nitrogen doping of ZnO.
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Dates
Type | When |
---|---|
Created | 15 years, 8 months ago (Dec. 22, 2009, 6:33 p.m.) |
Deposited | 2 years, 2 months ago (June 23, 2023, 11:33 p.m.) |
Indexed | 3 weeks, 5 days ago (July 30, 2025, 6:53 a.m.) |
Issued | 15 years, 8 months ago (Dec. 21, 2009) |
Published | 15 years, 8 months ago (Dec. 21, 2009) |
Published Online | 15 years, 8 months ago (Dec. 22, 2009) |
Published Print | 15 years, 8 months ago (Dec. 21, 2009) |
@article{Lyons_2009, title={Why nitrogen cannot lead to p-type conductivity in ZnO}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3274043}, DOI={10.1063/1.3274043}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lyons, J. L. and Janotti, A. and Van de Walle, C. G.}, year={2009}, month=dec }