DOI: 10.1063/1.327389. Capacitance-voltage measurements in amorphous Schottky barriers

Capacitance-voltage measurements in amorphous Schottky barriers

10.1063/1.327389

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A theory for the capacitance of junctions (in particular, Schottky barriers) made from amorphous semiconductors is presented. It is emphasized that this theory is very different from the usual theory used for crystalline semiconductors. A self-consistent scheme to use the capacitance results to find the density of localized states in the band gap of amorphous semiconductors is developed. This method provides a strong complement to the field-effect technique for finding the density of states. Theoretical calculations are presented to illustrate the procedure and some of its advantages over the field-effect method. The relation to earlier work is discussed.

Bibliography

Singh, J., & Cohen, M. H. (1980). Capacitance-voltage measurements in amorphous Schottky barriers. Journal of Applied Physics, 51(1), 413â418.

Authors 2

Jasprit Singh (first)
Morrel H. Cohen (additional)

References 13 Referenced 22

{'key': '2024020422285143900_r1', 'first-page': '937', 'volume': '33', 'year': '1976', 'journal-title': 'Philos. Mag.'} / Philos. Mag. (1976)
10.1016/0022-3093(72)90220-7 / Non-Cryst. Solids (1972)
10.1016/0022-3093(76)90134-4 / Non-Cryst. Solids (1976)
{'key': '2024020422285143900_r4'}
10.7567/JJAPS.18S1.109 / Jpn. J. Appl. Phys. Suppl. (1979)
10.1063/1.90749 / Appl. Phys. Lett. (1979)
{'key': '2024020422285143900_r5', 'first-page': '351', 'volume': 'ED-24', 'year': '1977', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1977)
10.1080/13642817808245332 / Philos. Mag. (1978)
10.1103/PhysRevB.13.3495 / Phys. Rev. B (1976)
{'key': '2024020422285143900_r8'}
{'key': '2024020422285143900_r9'}
{'key': '2024020422285143900_r10', 'first-page': '5', 'volume': '1', 'year': '1964', 'journal-title': 'Surf. Sci.'} / Surf. Sci. (1964)
10.1103/PhysRevLett.22.1065 / Phys. Rev. Lett. (1969)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 5:28 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 8:45 a.m.)
Issued	45 years, 7 months ago (Jan. 1, 1980)
Published	45 years, 7 months ago (Jan. 1, 1980)
Published Print	45 years, 7 months ago (Jan. 1, 1980)

Funders 0

None

BibTeX

@article{Singh_1980, title={Capacitance-voltage measurements in amorphous Schottky barriers}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.327389}, DOI={10.1063/1.327389}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Singh, Jasprit and Cohen, Morrel H.}, year={1980}, month=jan, pages={413–418} }

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