DOI: 10.1063/1.327383. Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAs

Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAs

10.1063/1.327383

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Doping solely during periods when growth was suspended has been used to synthesize profiles not easily achieved by conventional doping techniques. Suspension of growth under arsenic stabilized conditions allows Ge doping to produce n-type complex profiles with reduced autocompensation. At higher temperatures, autocompensation becomes apparent. Under gallium stabilized conditions, heavily autocompensated n-type layers resulted, consistent with a nonunity incorporation coefficient.

Bibliography

Wood, C. E. C., Metze, G., Berry, J., & Eastman, L. F. (1980). Complex free-carrier profile synthesis by ââatomic-planeââ doping of MBE GaAs. Journal of Applied Physics, 51(1), 383â387.

Authors 4

C. E. C. Wood (first)
G. Metze (additional)
J. Berry (additional)
L. F. Eastman (additional)

References 16 Referenced 206

{'key': '2024020422310711100_r1'}
10.1049/el:19790154 / Electron. Lett. (1979)
10.1063/1.90839 / Appl. Phys. Lett. (1979)
10.1063/1.1659789 / Appl. Phys. (1971)
{'key': '2024020422310711100_r5'}
{'key': '2024020422310711100_r6'}
10.1063/1.325517 / J. Appl. Phys. (1978)
10.1063/1.90499 / Appl. Phys. Lett. (1978)
{'key': '2024020422310711100_r9', 'first-page': '1279', 'volume': '48', 'year': '1977', 'journal-title': 'J. Appl. Phys.'} / J. Appl. Phys. (1977)
10.1063/1.1661082 / J. Appl. Phys. (1972)
10.1063/1.321998 / J. Appl. Phys. (1975)
10.1063/1.88469 / Appl. Phys. Lett. (1975)
10.1063/1.90933 / Appl. Phys. Lett. (1979)
{'key': '2024020422310711100_r14'}
{'key': '2024020422310711100_r15'}
{'key': '2024020422310711100_r16', 'first-page': '600', 'volume': 'ED-26', 'year': '1978', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1978)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:37 p.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 5:31 p.m.)
Indexed	11 months, 4 weeks ago (Sept. 7, 2024, 5:19 a.m.)
Issued	45 years, 8 months ago (Jan. 1, 1980)
Published	45 years, 8 months ago (Jan. 1, 1980)
Published Print	45 years, 8 months ago (Jan. 1, 1980)

Funders 0

None

BibTeX

@article{Wood_1980, title={Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAs}, volume={51}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.327383}, DOI={10.1063/1.327383}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Wood, C. E. C. and Metze, G. and Berry, J. and Eastman, L. F.}, year={1980}, month=jan, pages={383–387} }

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