Abstract
Carbon nanotube (CNT) heaters with sub-5 nm diameter induce highly localized phase change in Ge2Sb2Te5 (GST) chalcogenide. A significant reduction in resistance of test structures is measured as the GST near the CNT heater crystallizes. Effective GST heating occurs at currents as low as 25 μA, significantly lower than in conventional phase change memory with metal electrodes (0.1–0.5 mA). Atomic force microscopy reveals nucleation sites associated with phase change in GST around the CNT heater. Finite element simulations confirm electrical characteristics consistent with the experiments, and reveal the current and phase distribution in GST.
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Dates
Type | When |
---|---|
Created | 15 years, 8 months ago (Dec. 14, 2009, 6:48 p.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 1:14 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:53 a.m.) |
Issued | 15 years, 8 months ago (Dec. 14, 2009) |
Published | 15 years, 8 months ago (Dec. 14, 2009) |
Published Online | 15 years, 8 months ago (Dec. 14, 2009) |
Published Print | 15 years, 8 months ago (Dec. 14, 2009) |
@article{Xiong_2009, title={Inducing chalcogenide phase change with ultra-narrow carbon nanotube heaters}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3273370}, DOI={10.1063/1.3273370}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Xiong, Feng and Liao, Albert and Pop, Eric}, year={2009}, month=dec }